參數(shù)資料
型號： BSP255
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： P-channel enhancement mode vertical D-MOS transistor
中文描述： 0.325 A, 300 V, 17 ohm, P-CHANNEL, Si, POWER, MOSFET
文件頁數(shù)： 3/10頁
文件大?。?/td> 65K
代理商： BSP255
1996 Aug 05
3
Philips Semiconductors
Product specification
P-channel enhancement mode
vertical D-MOS transistor
BSP255
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1.
2.
T
s
is the temperature at the soldering point of the drain lead.
Pulse width and duty cycle limited by maximum junction temperature.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
300
±
20
325
1.3
4
+150
+150
UNIT
V
DS
V
GS
I
D
I
DM
P
tot
T
stg
T
j
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
operating junction temperature
65
65
V
V
mA
A
W
°
C
°
C
T
s
= 100
°
C; note 1
note 2
T
s
= 100
°
C
Source-drain diode
I
S
I
SM
source current (DC)
peak pulsed source current
T
s
= 100
°
C
note 2
0.5
2
A
A
Fig.2 Power derating curve.
handbook, halfpage
(W)
0
200
0
2
4
6
8
MBH446
50
100
150
Ts (
o
C)
δ
= 0.01; T
S
= 100
°
C.
(1) R
DSon limitation
.
Fig.3 DC SOAR.
handbook, halfpage
ID
(A)
MBH445
1
1
10
1
10
2
10
3
10
2
10
3
10
VDS (V)
tp
T
P
t
tp
T
δ
=
1 ms
10 ms
100
μ
s
DC
(1)
tp =
10
μ
s
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