參數(shù)資料
型號: BSP255
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: P-channel enhancement mode vertical D-MOS transistor
中文描述: 0.325 A, 300 V, 17 ohm, P-CHANNEL, Si, POWER, MOSFET
文件頁數(shù): 4/10頁
文件大小: 65K
代理商: BSP255
1996 Aug 05
4
Philips Semiconductors
Product specification
P-channel enhancement mode
vertical D-MOS transistor
BSP255
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
12
K/W
Fig.4
Transient thermal resistance from junction to soldering point as a function of pulse time; typical values.
handbook, full pagewidth
1
10
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
1
10
1
10
6
10
5
10
4
10
3
10
2
10
1
MBH444
tp (s)
tp
T
P
t
tp
T
δ
=
Rth j-s
(K/W)
δ
=
0.75
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