參數(shù)資料
型號: CY7C1339B-133BGIT
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: SRAM
英文描述: 128K X 32 CACHE SRAM, 4 ns, PBGA119
封裝: 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119
文件頁數(shù): 17/17頁
文件大?。?/td> 527K
代理商: CY7C1339B-133BGIT
CY7C1339B
Document #: 38-05141 Rev. *A
Page 9 of 17
Capacitance[9]
Parameter
Description
Test Conditions
TQFP Max.
BGA Max.
Unit
CIN
Input Capacitance
TA = 25°C, f = 1 MHz,
VDD = 3.3V
VDDQ = 3.3V
4
6
pF
CCLK
Clock Input Capacitance
4
6
pF
CI/O
Input/Output Capacitance
4
8
pF
AC Test Loads and Waveforms
Thermal Resistance[9]
Description
Test Conditions
Symbol
TQFP Typ.
BGA
Units
Thermal Resistance
(Junction to Ambient)
Still Air, soldered on a 4 × 4.5 inch,
2-layer printed circuit board
QJA
41.83
47.63
°C/W
Thermal Resistance
(Junction to Case)
QJC
9.99
11.71
°C/W
Note:
9.
Tested initially and after any design or process changes that may affect these parameters.
10. Input waveform should have a slew rate of 1 V/ns.
OUTPUT
R= 317/1667
R= 351/1538
5pF
INCLUDING
JIG AND
SCOPE
(a)
(b)
OUTPUT
RL = 50
Z0 = 50
VL = 1.5V for 3.3 VDDQ
3.3/2.5V
ALL INPUT PULSES
[10]
3.0/2.5V
GND
90%
10%
90%
10%
≤ 1V/ns
(c)
1.25V for 2.5V VDDQ
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