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參數(shù)資料
| 型號(hào)： | EDD51321CBH-6CTT-E |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | 512M bits DDR SDRAM |
| 中文描述： | 16M X 32 SYNCHRONOUS DRAM, 5 ns, PBGA90 |
| 封裝： | ROHS COMPLIANT, FBGA-90 |
| 文件頁數(shù)： | 4/55頁 |
| 文件大?。?/td> | 589K |
| 代理商： | EDD51321CBH-6CTT-E |
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EDD51321CBH
Preliminary Data Sheet E1094E30 (Ver. 3.0)
4
Electrical Specifications
All voltages are referenced to VSS (GND).
After power up, wait more than 200 μs and then, execute power on sequence and CBR (Auto) refresh before
proper device operation is achieved.
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Note
Voltage on any pin relative to VSS
VT
–0.5 to +2.3
V
Supply voltage relative to VSS
VDD
–0.5 to +2.3
V
Short circuit output current
IOS
50
mA
Power dissipation
PD
1.0
W
Operating ambient temperature
TA
–20 to +85
°
C
Storage temperature
Tstg
–55 to +125
°
C
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended DC Operating Conditions (TA =
20
°
C to +85
°
C)
Parameter
Pins
Symbol
min
typ.
max
Unit
Notes
Supply voltage
VDD,
VDDQ
VSS,
VSSQ
1.7
1.8
1.95
V
1
0
0
0
V
Input high voltage
All other input VIH
0.8
×
VDDQ
—
VDDQ + 0.3
V
2
Input low voltage
pins
VIL
–0.3
—
0.2
×
VDDQ
V
3
DC input voltage level
CK, /CK
VIN (DC)
–0.3
—
VDDQ + 0.3
V
AC Input differential cross
point voltage
VIX
0.4
×
VDDQ
0.5
×
VDDQ 0.6
×
VDDQ
V
6
DC input differential voltage
VID (DC)
0.4
×
VDDQ
—
VDDQ + 0.6
V
5
AC input differential voltage
VID (AC)
0.6
×
VDDQ
—
VDDQ + 0.6
V
5
DC input high voltage
DQ, DM, DQS VIHD (DC)
0.7
×
VDDQ
—
VDDQ + 0.3
V
DC input low voltage
VILD (DC)
–0.3
—
0.3
×
VDDQ
V
AC input high voltage
VIHD (AC)
0.8
×
VDDQ
—
VDDQ + 0.3
V
AC input low voltage
VILD (AC)
–0.3
—
0.2
×
VDDQ
V
Notes: 1. VDDQ must be equal to VDD.
2. VIH (max.) = 2.3V (pulse width
≤
5ns).
3. VIL (min.) = –0.5V (pulse width
≤
5ns).
4. All voltage referred to VSS and VSSQ must be same potential.
5. VID (DC) and VID (AC) are the magnitude of the difference between the input level on CK and the input
level on /CK.
6. The value of VIX is expected to be 0.5
×
VDDQ and must track variations in the DC level of the same.
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| EDD51321CBH-7ETT-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR SDRAM |
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| EDD51323DBH-5BLS-F | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR Mobile RAM? WTR (Wide Temperature Range), Low Power Function |
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