參數(shù)資料
型號： GS8182S18BD-250I
廠商： GSI TECHNOLOGY
元件分類： SRAM
英文描述： 1M X 18 DDR SRAM, 0.45 ns, PBGA165
封裝： 13 X 15 MM, 1 MM PITCH, FPBGA-165
文件頁數(shù)： 10/37頁
文件大?。?/td> 564K
代理商： GS8182S18BD-250I
GS8182S08/09/18/36BD-400/375/333/300/250/200/167
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03b 6/2010
18/37
2007, GSI Technology
Programmable Impedance HSTL Output Driver DC Electrical Characteristics
Parameter
Symbol
Min.
Max.
Units
Notes
Output High Voltage
VOH1
VDDQ/2 – 0.12
VDDQ/2 + 0.12
V
1, 3
Output Low Voltage
VOL1
VDDQ/2 – 0.12
VDDQ/2 + 0.12
V
2, 3
Output High Voltage
VOH2
VDDQ – 0.2
VDDQ
V
4, 5
Output Low Voltage
VOL2
Vss
0.2
V
4, 6
Notes:
1.
IOH = (VDDQ/2) / (RQ/5) +/– 15% @ VOH = VDDQ/2 (for: 175Ω ≤ RQ ≤ 350Ω)
2.
IOL = (VDDQ/2) / (RQ/5) +/– 15% @ VOL = VDDQ/2 (for: 175Ω ≤ RQ ≤ 350Ω)
3. Parameter tested with RQ = 250
Ω and VDDQ = 1.5 V or 1.8 V.
4. 0
Ω ≤ RQ ≤ ∞Ω
5. IOH = –1.0 mA
6. IOL = 1.0 mA
Operating Currents
Parameter
Symbol
Test Conditions
-400
-375
-333
-300
-250
-200
-167
Notes
0
to
70°C
–
40
to
85°C
0
to
70°C
–
40
to
85°C
0
to
70°C
–
40
to
85°C
0
to
70°C
–
40
to
85°C
0
to
70°C
–
40
to
85°C
0
to
70°C
–
40
to
85°C
0
to
70°C
–
40
to
85°C
Operating Current
(x36): DDR
IDD
VDD = Max, IOUT = 0 mA
Cycle Time
≥ tKHKH Min
905
mA
915
mA
855
mA
905
mA
645
mA
655
mA
595
mA
605
mA
515
mA
525
mA
435
mA
445
mA
380
mA
390
mA
2, 3
Operating Current
(x18): DDR
IDD
VDD = Max, IOUT = 0 mA
Cycle Time
≥ tKHKH Min
720
mA
730
mA
680
mA
690
mA
515
mA
525
mA
485
mA
495
mA
420
mA
430
mA
355
mA
365
mA
315
mA
325
mA
2, 3
Operating Current
(x9): DDR
IDD
VDD = Max, IOUT = 0 mA
Cycle Time
≥ tKHKH Min
720
mA
730
mA
680
mA
690
mA
515
mA
525
mA
485
mA
495
mA
420
mA
430
mA
355
mA
365
mA
315
mA
325
mA
2, 3
Operating Current
(x8): DDR
IDD
VDD = Max, IOUT = 0 mA
Cycle Time
≥ tKHKH Min
720
mA
730
mA
680
mA
690
mA
515
mA
525
mA
485
mA
495
mA
420
mA
430
mA
355
mA
365
mA
315
mA
325
mA
2, 3
Standby Current
(NOP): DDR
ISB1
Device deselected,
IOUT = 0 mA, f = Max,
All Inputs
≤ 0.2 V or
≥ VDD – 0.2 V
200
mA
210
mA
195
mA
205
mA
170
mA
180
mA
165
mA
175
mA
155
mA
165
mA
140
mA
150
mA
135
mA
145
mA
2, 4
Notes:
1.
Power measured with output pins floating.
2.
Minimum cycle, IOUT = 0 mA
3.
Operating current is calculated with 50% read cycles and 50% write cycles.
4.
Standby Current is only after all pending read and write burst operations are completed.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8182S18D-250 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 18MBIT 1MX18 0.45NS 165FBGA - Trays
GS8182S18D-250I 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 18MBIT 1MX18 0.45NS 165FPBGA - Trays
GS8182S36BD-167 制造商:GSI Technology 功能描述:512K X 36 (18 MEG) BURST OF 2 - Trays
GS8182S36BD-167I 制造商:GSI Technology 功能描述:512K X 36 (18 MEG) BURST OF 2 - Trays
GS8182S36BD-200 制造商:GSI Technology 功能描述:512K X 36 (18 MEG) BURST OF 2 - Trays
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