參數(shù)資料
型號: HYB 39S64800CT
廠商: SIEMENS AG
英文描述: 64MBit Synchronous DRAM(64M位(4列 × 2M位 × 8)同步動態(tài)RAM)
中文描述: 64兆比特同步DRAM(6400位(4列× 2位× 8)同步動態(tài)RAM)的
文件頁數(shù): 15/52頁
文件大?。?/td> 346K
代理商: HYB 39S64800CT
HYB 39S64400/800CT(L)
64-MBit Synchronous DRAM
Data Book
15
12.99
Operating Currents
T
A
= 0 to 70
°
C,
V
DD
= 3.3 V
±
0.3 V
(Recommended Operating Conditions unless otherwise noted)
Notes
3. These parameters depend on the cycle rate and these values are measured at 133 MHz for -7.5
and at 100 MHz for -8 parts. Input signals are changed once during
t
CK
, excepts for
I
CC6
and for
standby currents when
t
CK
= infinity.
4. These parameters are measured with continuous data stream during read access and all DQ
toggling. CL = 3 and BL = 4 is assumed and the
V
DDQ
current is excluded.
Parameter & Test Condition
Symb. -7.5 -8
Unit
Note
max.
Operating Current
t
RC
=
t
RC(MIN.)
,
t
CK
=
t
CK(MIN.)
Outputs open, Burst Length = 4, CL=3
All banks operated in random access,
all banks operated in ping-pong
manner to maximize gapless data
access
I
CC1
x4
x8
110
120
100
110
mA
mA
3
Precharge standby current
in Power Down Mode
CS =
V
IH (MIN.)
, CKE
V
IL(MAX.)
Precharge standby current
in Non Power Down Mode
CS =
V
IH (MIN.)
,
CKE
V
IH(MIN.)
No operating current
t
CK
= min., CS =
V
IH (MIN.)
,
active state (max. 4 banks)
t
CK
= min
t
CK
= infinity
I
CC2P
I
CC2PS
2
2
mA
3
1.5
1.5
mA
3
t
CK
= min
t
CK
= infinity
I
CC2N
I
CC2NS
40
35
mA
3
15
15
mA
3
CKE
V
IH(MIN.)
CKE
V
IL(MAX.)
I
CC3N
I
CC3P
50
45
mA
3
8
8
mA
3
Burst Operating Current
t
CK
= min
Read command cycling
I
CC4
x4
x8
70
80
60
70
mA
mA
3, 4
Auto Refresh Current
t
CK
= min
Auto Refresh command cycling
I
CC5
140 130 mA
3
Self Refresh Current
Self Refresh Mode
CKE = 0.2 V
standard
version
I
CC6
1
1
mA
3
L-version
500 500
μ
A
3
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