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參數(shù)資料
| 型號： | HYB18L128160BF |
| 廠商： | QIMONDA |
| 英文描述： | DRAMs for Mobile Applications 128-Mbit Mobile-RAM |
| 中文描述： | 針對移動應(yīng)用的DRAM 128 - Mbit的移動RAM |
| 文件頁數(shù)： | 33/55頁 |
| 文件大?。?/td> | 1399K |
| 代理商： | HYB18L128160BF |
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Data Sheet
33
Rev. 1.71, 2007-01
05282004-NZNK-8T0D
HY[B/E]18L128160B[C/F]-7.5
128-Mbit Mobile-RAM
Functional DescriptionCommands
2.4.6.5
WRITE to PRECHARGE
A WRITE burst may be followed by, or truncated with a PRECHARGE command to the same bank, provided that
Auto Precharge was not activated. This is shown in
Figure 34
.
The PRECHARGE command should be issued t
WR
after the clock edge at which the last desired data element of
the WRITE burst was registered. Additionally, when truncating a WRITE burst, DQM must be pulled to mask input
data presented during t
WR
prior to the PRECHARGE command. Following the PRE-CHARGE command, a
subsequent ACTIVE command to the same bank cannot be issued until t
RP
is met.
In the case of a WRITE being executed to completion, a PRECHARGE command issued at the optimum time (as
described above) provides the same operation that would result from the same WRITE burst with Auto Precharge
enabled. The disadvantage of the PRECHARGE command is that it requires that the command and address
busses be available at the appropriate time to issue the command. The advantage of the PRECHARGE command
is that it can be used to truncate bursts.
Figure 34
WRITE to PRECHARGE Timing
"A ! #OL N
$) N
"URST ,ENGTH
SUBSEQUENT ELEMENTS OF $ATA )N ARE PROVIDED IN THE PROGRAMMED ORDER FOLLOWING $) N
$) N
IS MASKED DUE TO $1- PULLED ()'( DURING T
72
PERIOD PRIOR TO 02%#(!2'% COMMAND
BANK ! COLUMN N
$ATA )N TO COLUMN N
IN THE CASE SHOWN
$ONgT #ARE
$1
$) N
$) N
$) N
T
20
./0
T
72
./0
#,+
$1-
#OMMAND
./0
./0
./0
!#4
02%
72)4%
!DDRESS
"A !
#OL N
"A !
2OW A
"A !
$IS !0
0RE "ANK !
0RE !LL
!0
!
!0
!0
$IS !0
!UTO 0RECHARGE
$ISABLE !UTO 0RECHARGE
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| HYB18L256160B | DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB18L128160BF-7.5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L128160BF-75 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications |
| HYB18L256160B | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
| HYB18L256160BC-7.5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L256160BC-75 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications |
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