參數(shù)資料
型號(hào): HYB18L128160BF
廠商: QIMONDA
英文描述: DRAMs for Mobile Applications 128-Mbit Mobile-RAM
中文描述: 針對(duì)移動(dòng)應(yīng)用的DRAM 128 - Mbit的移動(dòng)RAM
文件頁(yè)數(shù): 39/55頁(yè)
文件大?。?/td> 1399K
代理商: HYB18L128160BF
Data Sheet
39
Rev. 1.71, 2007-01
05282004-NZNK-8T0D
HY[B/E]18L128160B[C/F]-7.5
128-Mbit Mobile-RAM
Functional DescriptionCommands
2.4.9.2
SELF REFRESH
Figure 43
SELF REFRESH Entry Command
The SELF REFRESH command can be used to retain data in the Mobile-RAM, even if the rest of the system is
powered down. When in the self refresh mode, the Mobile-RAM retains data without external clocking. The SELF
REFRESH command is initiated like an AUTO REFRESH command except CKE is LOW. Input signals except
CKE are “Don’t Care” during SELF REFRESH.
The procedure for exiting SELF REFRESH requires a stable clock prior to CKE returning HIGH. Once CKE is
HIGH, NOP commands must be issued for t
RC
because time is required for a completion of any internal refresh in
progress.
If during normal operation burst auto refresh or user controlled refresh is used, add 4096 auto refresh cycles just
before self refresh entry and just after self refresh exit.
Figure 44
Self Refresh Entry and Exit
$ONgT #ARE
#3
#+%
#,+
! !
"! "!
#!3
7%
2!3
T
20
T
2#
T
2#
3ELF 2EFRESH
%NTRY #OMMAND
3ELF 2EFRESH
%XIT #OMMAND
%XIT FROM
3ELF 2EFRESH
!NY #OMMAND
!UTO 2EFRESH
2ECOMMENDED
$ONgT #ARE
T
32%8
!
!0
0RE !LL
2OW N
#,+
#+%
#OMMAND
./0
!2&
./0
./0
./0
02%
!2&
!#4
./0
!DDRESS
"A !
2OW N
$1
(IGH :
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