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參數(shù)資料
| 型號： | HYB18L128160BF |
| 廠商： | QIMONDA |
| 英文描述： | DRAMs for Mobile Applications 128-Mbit Mobile-RAM |
| 中文描述： | 針對移動應(yīng)用的DRAM 128 - Mbit的移動RAM |
| 文件頁數(shù)： | 35/55頁 |
| 文件大?。?/td> | 1399K |
| 代理商： | HYB18L128160BF |
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Data Sheet
35
Rev. 1.71, 2007-01
05282004-NZNK-8T0D
HY[B/E]18L128160B[C/F]-7.5
128-Mbit Mobile-RAM
Functional DescriptionCommands
The PRECHARGE command is used to deactivate (close) the open row in a particular bank or the open row in all
banks. The bank(s) will be available for a subsequent row access a specified time (t
RP
) after the PRECHARGE
only one bank is to be precharged, inputs BA0, BA1 select the bank. Otherwise BA0, BA1 are treated as “Don’t
Care”.
Once a bank has been precharged, it is in the idle state and must be activated prior to any READ or WRITE
commands being issued to that bank. A PRECHARGE command will be treated as a NOP if there is no open row
in that bank, or if the previously open row is already in the process of precharging.
2.4.8.1
AUTO PRECHARGE
Auto Precharge is a feature which performs the same individual-bank precharge functions described above, but
without requiring an explicit command. This is accomplished by using A10 to enable Auto Precharge in conjunction
with a specific READ or WRITE command. A precharge of the bank/row that is addressed with the READ or
WRITE command is automatically performed upon completion of the READ or WRITE burst. Auto Precharge is
non persistent in that it is either enabled or disabled for each individual READ or WRITE command. Auto
Precharge ensures that the precharge is initiated at the earliest valid stage within a burst. The user must not issue
another command to the same bank until the precharge (t
RP
) is completed. This is determined as if an explicit
PRECHARGE command was issued at the earliest possible time, as described for each burst type.
2.4.8.2
CONCURRENT AUTO PRECHARGE
A READ or WRITE burst with Auto Precharge enabled can be interrupted by a subsequent READ or WRITE
command issued to a different bank.
Figure 37
shows a READ with Auto Precharge to bank n, interrupted by a READ (with or without Auto Precharge)
to bank m. The READ to bank m will interrupt the READ to bank n, CAS latency later. The precharge to bank n
will begin when the READ to bank m is registered.
Figure 38
shows a READ with Auto Precharge to bank n, interrupted by a WRITE (with or without Auto Precharge)
to bank m. The precharge to bank n will begin when the WRITE to bank m is registered. DQM should be pulled
HIGH two clock cycles prior to the WRITE to prevent bus contention.
Figure 39
shows a WRITE with Auto Precharge to bank n, interrupted by a READ (with or without Auto Precharge)
to bank m. The precharge to bank n will begin t
WR
after the new command to bank m is registered. The last valid
data-in to bank n is one clock cycle prior to the READ to bank m.
Figure 40
shows a WRITE with Auto Precharge to bank n, interrupted by a WRITE (with or without Auto
Precharge) to bank m. The precharge to bank n will begin t
WR
after the WRITE to bank m is registered. The last
valid data-in to bank n is one clock cycle prior to the WRITE to bank m.
Table 13
Parameter
Timing Parameters for PRECHARGE
Symbol
- 7.5
Units
Notes
min.
max.
ACTIVE to PRECHARGE command period
WRITE recovery time
PRECHARGE command period
t
RAS
t
WR
t
RP
45
14
19
100k
–
–
ns
ns
ns
1)
1) These parameters account for the number of clock cycles and depend on the operating frequency as follows:
no. of clock cycles = specified delay / clock period; round up to next integer.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB18L128160BF-7.5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L128160BF-75 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications |
| HYB18L256160B | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
| HYB18L256160BC-7.5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L256160BC-75 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications |
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