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參數(shù)資料
| 型號(hào)： | HYB18L128160BF |
| 廠商： | QIMONDA |
| 英文描述： | DRAMs for Mobile Applications 128-Mbit Mobile-RAM |
| 中文描述： | 針對(duì)移動(dòng)應(yīng)用的DRAM 128 - Mbit的移動(dòng)RAM |
| 文件頁數(shù)： | 44/55頁 |
| 文件大?。?/td> | 1399K |
| 代理商： | HYB18L128160BF |
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Data Sheet
44
Rev. 1.71, 2007-01
05282004-NZNK-8T0D
HY[B/E]18L128160B[C/F]-7.5
128-Mbit Mobile-RAM
Functional DescriptionFunction Truth Tables
7) READs or WRITEs listed in the Command/Action column include READs or WRITEs with Auto Precharge enabled and
READs or WRITEs with Auto Precharge disabled.
8) Requires appropriate DQM masking.
9) Concurrent Auto Precharge: bank n will start precharging when its burst has been interrupted by a READ or WRITE
command to bank m.
Table 17
CKEn-1 CKEn
L
Truth Table - CKE
Current State
Power Down
Self Refresh
Clock Suspend
Deep Power Down
Command
X
X
X
X
Action
Maintain Power Down
Maintain Self Refresh
Maintain Clock Suspend
Maintain Deep Power
Down
Exit Power Down
Exit Self Refresh
Exit Clock Suspend
Exit Deep Power Down
Enter Precharge Power
Down
Enter Active Power Down
Enter Self Refresh
Enter Clock Suspend
Notes
1)2)3)4)
L
1) CKEn is the logic state of CKE at clock edge n; CKEn-1 was the state of CKE at the previous clock edge.
2) Current state is the state immediately prior to clock edge n.
3) COMMAND n is the command registered at clock edge n; ACTION n is a result of COMMAND n.
4) All states and sequences not shown are illegal or reserved.
5) DESELECT or NOP commands should be issued on any clock edges occurring during t
RC
period.
6) Exit from DEEP POWER DOWN requires the same command sequence as for power-up initialization.
to
to
to
L
H
Power Down
Self Refresh
Clock Suspend
Deep Power Down
All Banks Idle
DESELECT or NOP
DESELECT or NOP
X
X
DESELECT or NOP
to
to 5)
to
to , 6)
H
L
to
Bank(s) Active
All Banks Idle
Read / Write burst
see
Table 15
and
Table 16
DESELECT or NOP
AUTO REFRESH
(valid)
to
to
to
H
H
to
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB18L128160BF-7.5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L128160BF-75 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications |
| HYB18L256160B | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
| HYB18L256160BC-7.5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L256160BC-75 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications |
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