參數(shù)資料
型號: HYB18T256400AF
廠商: INFINEON TECHNOLOGIES AG
英文描述: 256 Mbi t DDR2 SDRAM
中文描述: 256姆噸DDR2內(nèi)存
文件頁數(shù): 31/90頁
文件大?。?/td> 1246K
代理商: HYB18T256400AF
HYB18T256400/800/160AF
256Mb DDR2 SDRAM
INFINEON Technologies
Page 31 Rev. 1.02 May 2004
Read followed by a write to the same bank, Activate to Read delay = tRCDmin:
AL = 0, CL = 3, RL = (AL + CL) = 3, WL = (RL -1) = 2, BL = 4
Read followed by a write to the same bank, Activate to Read delay > tRCDmin:
AL = 1, CL = 3, RL = 4, WL = 3, BL = 4
Activate
Bank A
Bank A
Write
tRCD
CL = 3
AL = 0
RL = AL + CL = 3
WL = RL -1 = 2
PostCAS2
CMD
DQ
DQS,
DQS
CK, CK
0
2
3
4
5
1
6
7
8
9
10
11
Read
Dout0 Dout1 Dout2 Dout3
Din0
Din1
Din2
Din3
Activate
Bank A
tRCD > tRCDmin.
RL = 4
WL = 3
PostCAS5
CMD
DQ
DQS,
DQS
CK, CK
0
2
3
4
5
1
6
7
8
9
10
11
Bank A
Read
Dout0 Dout1 Dout2 Dout3
Din0
Din1
Din2
Din3
Write
Bank A
12
13
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