參數(shù)資料
型號: HYB18T256400AF
廠商: INFINEON TECHNOLOGIES AG
英文描述: 256 Mbi t DDR2 SDRAM
中文描述: 256姆噸DDR2內(nèi)存
文件頁數(shù): 56/90頁
文件大?。?/td> 1246K
代理商: HYB18T256400AF
Page 56 Rev. 1.02 May 2004
INFINEON Technologies
HYB18T256400/800/160AF
256Mb DDR2 SDRAM
Examples:
Active Power-Down Mode Entry and Exit after an Activate Command
Active Power-Down Mode Entry and Exit after a Read Command: RL = 4 (AL = 1, CL =3), BL = 4
note: Active Power-Down mode exit timing tXARD (“fast exit”) or tXARDS (“slow exit”) depends on the programmed
state in the MRS, address bit A12.
NOP
NOP
Activate
T0
T2
T1
CMD
NOP
Tn
Tn+1
CKE
Active
Power-Down
Entry
NOP
NOP
Act.PD 0
tIS
Tn+2
tIS
Active
Power-Down
Exit
Valid
Command
tXARD or
tXARDS *)
CK, CK
note: Active Power-Down mode exit timing tXARD (“fast exit”) or tXARDS (“slow exit”) depends on the programmed
state in the MRS, address bit A12.
NOP
NOP
READ
READ w/AP
T0
T2
T1
T3
T4
T5
T6
T7
T8
Dout A0
Dout A1
Dout A2
Dout A3
RL = 4
CL = 3
CMD
DQ
DQS,
DQS
NOP
NOP
NOP
NOP
NOP
NOP
Tn
Tn+1
CKE
AL = 1
Active
Power-Down
Entry
RL + BL/2
NOP
NOP
Act.PD 1
tIS
Tn+2
tIS
Active
Power-Down
Exit
Valid
Comm and
tXARD or
tXARDS *)
CK, CK
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB18T256400AF-3.7 制造商:Infineon Technologies AG 功能描述:64M X 4 DDR DRAM, 0.5 ns, PBGA60
HYB18T256400AF-5 制造商:Infineon Technologies AG 功能描述:SDRAM, DDR, 64M x 4, 60 Pin, Plastic, BGA
HYB18T256800AF-5 制造商:Infineon Technologies AG 功能描述:
HYB18T512161BF-25 制造商:Qimonda 功能描述:SDRAM, DDR, 32M x 16, 84 Pin, Plastic, BGA
HYB18T512400AF-5 制造商:Intersil Corporation 功能描述:SDRAM, DDR, 128M x 4, 60 Pin, Plastic, BGA