參數(shù)資料
型號: HYB3166165BT-40
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 4M x 16-Bit Dynamic RAM
中文描述: 4M X 16 EDO DRAM, 40 ns, PDSO50
封裝: 0.400 INCH, PLASTIC, TSOP2-50
文件頁數(shù): 16/29頁
文件大?。?/td> 284K
代理商: HYB3166165BT-40
Semiconductor Group
16
HYB3164(5/6)165AT(L)-40/-50/-60
4M x 16 EDO-DRAM
Write Cycle (OE Controlled Write)
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Valid Data
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t
RWL
t
WP
t
OEH
t
ODD
CWL
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t
DZO
t
OEA
t
CLZ
t
DS
t
OEZ
AAAA
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t
DH
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RC
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VIH
VIL
Row
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t
DZC
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“H” or “L”
Hi-Z
Hi-Z
Column
Row
t
ASC
t
RAD
t
RAL
t
CAH
t
RAH
RAS
UCAS
LCAS
Address
WE
OE
I/O
(Inputs)
I/O
(Outputs)
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VOH
VOL
t
RCD
.
t
RAS
t
CSH
t
CAS
t
RP
t
CRP
t
RSH
t
ASR
t
ASR
WL3
相關PDF資料
PDF描述
HYB3165165T-50 4M x 16-Bit Dynamic RAM
HYB3164165BTL-60 INDUCTOR CHIP .10UH 5% 0805 SMD
HYB3165165BTL-60 4M x 16-Bit Dynamic RAM
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