參數(shù)資料
型號(hào): HYB3166165BT-40
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 4M x 16-Bit Dynamic RAM
中文描述: 4M X 16 EDO DRAM, 40 ns, PDSO50
封裝: 0.400 INCH, PLASTIC, TSOP2-50
文件頁數(shù): 3/29頁
文件大小: 284K
代理商: HYB3166165BT-40
Semiconductor Group
3
HYB3164(5/6)165AT(L)-40/-50/-60
4M x 16 EDO-DRAM
Pin Names
A0-A12
Address Inputs for 8k-refresh version HYB 3164165T(L)
A0-A11
Address Inputs for 4k-refresh version HYB 3165165T(L)
A0-A10
Address Inputs for 2k-refresh version HYB 3166165T(L)
RAS
Row Address Strobe
OE
Output Enable
I/O1-I/O16
Data Input/Output
UCAS, LCAS
Column Address Strobe
WE
Read/Write Input
Vcc
Power Supply ( + 3.3V)
Vss
Ground
P-TSOPII-50 (400 mil)
* Pin 33 is A12 for HYB 3164165AT(L) and N.C. for HYB 3165(6)165AT(L)
** Pin 32 is A11 for HYB 3164(5)165AT(L) and N.C. for HYB 3166165AT(L)
Pin Configuration
O
VCC
I/O1
I/O2
I/O3
I/O4
VCC
I/O5
I/O6
I/O7
I/O8
N.C.
VCC
WE
RAS
N.C.
N.C.
N.C.
N.C.
A0
A1
A2
A3
A4
A5
VCC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
VSS
I/O16
I/O15
I/O14
I/O13
VSS
I/O12
I/O11
I/O10
I/O9
N.C.
VSS
LCAS
UCAS
OE
N.C.
N.C.
A12/N.C. *
A11/N.C.**
A10
A9
A8
A7
A6
VSS
.
.
相關(guān)PDF資料
PDF描述
HYB3165165T-50 4M x 16-Bit Dynamic RAM
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