參數(shù)資料
型號: HYB3166165BT-40
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 4M x 16-Bit Dynamic RAM
中文描述: 4M X 16 EDO DRAM, 40 ns, PDSO50
封裝: 0.400 INCH, PLASTIC, TSOP2-50
文件頁數(shù): 17/29頁
文件大?。?/td> 284K
代理商: HYB3166165BT-40
Semiconductor Group
17
HYB3164(5/6)165AT(L)-40/-50/-60
4M x 16 EDO-DRAM
Read-Write (Read-Modify-Write) Cycle
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AAA
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AAA
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AA
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t
ODD
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DZO
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AWD
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CWL
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Row
Row
t
CSH
t
CAS
t
CRP
t
RWC
t
ASR
t
RP
t
RAS
t
RAH
t
CAH
I/O
(Outputs)
VOH
VOL
VIH
VIL
VIH
VIL
I/O
(Inputs)
OE
WE
VIH
VIL
t
ASR
Column
t
RCD
t
DH
t
RSH
t
RAD
t
CWD
t
OEH
t
RWD
t
RWL
t
WP
t
CLZ
t
RCS
t
AA
t
OEA
t
DS
t
DZC
t
CAC
t
OEZ
Valid
Data in
Data
Out
t
RAC
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
“H” or “L”
t
ASC
VIH
VIL
VIH
VIL
RAS
UCAS
LCAS
Address
VIH
VIL
WL4
相關(guān)PDF資料
PDF描述
HYB3165165T-50 4M x 16-Bit Dynamic RAM
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