參數(shù)資料
型號: HYB3166165BT-40
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 4M x 16-Bit Dynamic RAM
中文描述: 4M X 16 EDO DRAM, 40 ns, PDSO50
封裝: 0.400 INCH, PLASTIC, TSOP2-50
文件頁數(shù): 27/29頁
文件大小: 284K
代理商: HYB3166165BT-40
Semiconductor Group
27
HYB3164(5/6)165AT(L)-40/-50/-60
4M x 16 EDO-DRAM
Hidden Refresh Early Write Cycle
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RAS
I/O
(Output)
I/O
(Input)
WE
Address
VIH
VIL
VIH
VIL
VIH
VIL
UCAS
LCAS
VIH
VIL
VIH
VIL
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“H” or “L”
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RC
t
RAS
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RCD
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RSH
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RAD
t
CAH
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WCH
t
WP
t
ASR
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RAH
t
DS
t
DH
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ASR
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CRP
t
CHR
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RP
t
RAS
t
RC
t
RP
t
ASC
Row
Row
Valid Data
HI-Z
Column
VOH
VOL
t
WRP
t
WRH
WL12
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參數(shù)描述
HYB3166165BT-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM
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HYB3166165BTL-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM
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