參數(shù)資料
型號(hào): HYB3166165BT-40
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 4M x 16-Bit Dynamic RAM
中文描述: 4M X 16 EDO DRAM, 40 ns, PDSO50
封裝: 0.400 INCH, PLASTIC, TSOP2-50
文件頁數(shù): 5/29頁
文件大?。?/td> 284K
代理商: HYB3166165BT-40
Semiconductor Group
5
HYB3164(5/6)165AT(L)-40/-50/-60
4M x 16 EDO-DRAM
Block Diagram for HYB 3164165AT(L)
No. 2 Clock
Generator
Column
Address
Buffer(9)
Refresh
Controller
Refresh
Counter (13)
Address
Buffers(13)
Row
No. 1 Clock
Generator
&
Data in
Buffer
Data out
Buffer
Column
Decoder
Sense Amplifier
I/O Gating
Memory Array
8192x512x16
Row
Decoder
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
WE
UCAS
LCAS
.
8192
512
x16
.
RAS
9
13
16
I/O1
I
/O2
OE
13
13
16
16
9
I
/O16
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