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參數(shù)資料
| 型號： | IS43R16800A1-5TL |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 8Meg x 16 128-MBIT DDR SDRAM |
| 中文描述： | 8M X 16 DDR DRAM, 0.65 ns, PDSO66 |
| 封裝： | LEAD FREE, PLASTIC, TSOP2-66 |
| 文件頁數(shù)： | 14/72頁 |
| 文件大小： | 2174K |
| 代理商： | IS43R16800A1-5TL |
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14
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00A
04/17/06
ISSI
IS43R16800A1
Auto Precharge
Auto Precharge is a feature which performs the same individual-bank precharge function described above, but without requiring
an explicit command. This is accomplished by using A10 to enable Auto Precharge in conjunction with a specific Read or Write
command. A precharge of the bank/row that is addressed with the Read or Write command is automatically performed upon
completion of the Read or Write burst. Auto Precharge is non-persistent in that it is either enabled or disabled for each individual
Read or Write command. Auto Precharge ensures that the precharge is initiated at the earliest valid stage within a burst. This is
determined as if an explicit Precharge command was issued at the earliest possible time without violating t
RAS
(min). The user
must not issue another command to the same bank until the precharge (t
RP
) is completed.
The NTC DDR SDRAM devices supports the optional t
RAS
lockout feature. This feature allows a Read command with Auto Pre-
charge to be issued to a bank that has been activated (opened) but has not yet satisfied the t
RAS
(min) specification. The t
RAS
lockout feature essentially delays the onset of the auto precharge operation until two conditions occur. One, the entire burst
length of data has been successfully prefetched from the memory array; and two, t
RAS
(min) has been satisfied.
As a means to specify whether a DDR SDRAM device supports the t
RAS
lockout feature, a new parameter has been defined,
t
RAP
(RAS Command to Read Command with Auto Precharge or better stated Bank Activate to Read Command with Auto Pre-
charge). For devices that support the t
RAS
lockout feature, t
RAP
= t
RCD
(min). This allows any Read Command (with or without
Auto Precharge) to be issued to an open bank once t
RCD
(min) is satisfied.
Burst Terminate
The Burst Terminate command is used to truncate read bursts (with Auto Precharge disabled). The most re-cently registered
Read command prior to the Burst Terminate command is truncated, as shown in the Operation section of this data sheet. Write
burst cycles are not to be terminated with the Burst Terminate command.
t
RAP
Definition
CK
CK
Command
DQ (BL=2)
t
RAPmin
NOP
ACT
NOP
RD A
NOP
NOP
NOP
NOP
ACT
NOP
NOP
t
RCDmin
t
RASmin
DQ0
DQ1
The above timing diagrams show the effects of t
for devices that support t
with Auto Precharge command (RDA) is issued with t
(min) and dataout is available with the shortest latency from the
Bank Activate command (ACT). The internal precharge operation, however, does not begin until after t
RAS
(min) is satisfied.
CL=2, t
CK
=10ns
Command
DQ (BL=4)
NOP
ACT
NOP
RD A
NOP
NOP
NOP
*
NOP
ACT
NOP
NOP
DQ0
DQ1
DQ2
DQ3
t
RPmin
Command
DQ (BL=8)
NOP
ACT
NOP
RD A
NOP
NOP
*
NOP
NOP
ACT
NOP
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
t
RPmin
DQ6
DQ7
*
*
Indicates Auto Precharge begins here
t
RPmin
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| IS43R32400A-6B | 4Meg x 32 128-MBIT DDR SDRAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS43R16800A-5T | 功能描述:動態(tài)隨機存取存儲器 128M 2.5v 8Mx16 400MHz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS43R16800A-5TL | 功能描述:動態(tài)隨機存取存儲器 128M 2.5v 8Mx16 400MHz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS43R16800A-5TL-TR | 功能描述:動態(tài)隨機存取存儲器 128M 2.5v 8Mx16 400MHz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS43R16800A-5T-TR | 功能描述:動態(tài)隨機存取存儲器 128M 2.5v 8Mx16 400MHz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS43R16800A-6 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:8Meg x 16 128-MBIT DDR SDRAM |
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