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參數(shù)資料
| 型號(hào)： | IS43R16800A1-5TL |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 8Meg x 16 128-MBIT DDR SDRAM |
| 中文描述： | 8M X 16 DDR DRAM, 0.65 ns, PDSO66 |
| 封裝： | LEAD FREE, PLASTIC, TSOP2-66 |
| 文件頁(yè)數(shù)： | 42/72頁(yè) |
| 文件大?。?/td> | 2174K |
| 代理商： | IS43R16800A1-5TL |
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42
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00A
04/17/06
ISSI
IS43R16800A1
Power Down
Power Down is entered when CKE is registered low (no accesses can be in progress). If Power Down occurs when all banks
are idle, this mode is referred to as Precharge Power Down; if Power Down occurs when there is a row active in any bank, this
mode is referred to as Active Power Down. Entering Power Down deactivates the input and output buffers, excluding CK, CK
and CKE. The DLL is still running in Power Down mode, so for maximum power savings, the user has the option of disabling the
DLL prior to entering Power Down. In that case, the DLL must be enabled after exiting Power Down, and 200 clock cycles must
occur before a Read command can be issued. In Power Down mode, CKE Low and a stable clock signal must be maintained at
the inputs of the DDR SDRAM, and all other input signals are “Don’t Care”. However, Power Down duration is limited by the
refresh requirements of the device, so in most applications, the self refresh mode is preferred over the DLL-disabled Power
Down mode.
The Power Down state is synchronously exited when CKE is registered high (along with a Nop or Deselect command). A valid,
executable command may be applied one clock cycle later.
Power Down
t
IS
t
IS
CK
CK
CKE
Command
No column
access in
progress
VALID
NOP
VALID
Don’t Care
Exit
power down
mode
Enter Power Down mode
(Burst Read or Write operation
must not be in progress)
NOP
t
PDEX
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| IS43R32400A-5BL | 4Meg x 32 128-MBIT DDR SDRAM |
| IS43R32400A-6B | 4Meg x 32 128-MBIT DDR SDRAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS43R16800A-5T | 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 128M 2.5v 8Mx16 400MHz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS43R16800A-5TL | 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 128M 2.5v 8Mx16 400MHz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS43R16800A-5TL-TR | 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 128M 2.5v 8Mx16 400MHz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS43R16800A-5T-TR | 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 128M 2.5v 8Mx16 400MHz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS43R16800A-6 | 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:8Meg x 16 128-MBIT DDR SDRAM |
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