參數(shù)資料
型號(hào): IS43R16800A1-5TL
廠商: INTEGRATED SILICON SOLUTION INC
元件分類(lèi): DRAM
英文描述: 8Meg x 16 128-MBIT DDR SDRAM
中文描述: 8M X 16 DDR DRAM, 0.65 ns, PDSO66
封裝: LEAD FREE, PLASTIC, TSOP2-66
文件頁(yè)數(shù): 38/72頁(yè)
文件大小: 2174K
代理商: IS43R16800A1-5TL
38
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00A
04/17/06
ISSI
IS43R16800A1
Write to Precharge: Interrupting (Burst Length = 4 or 8)
DI a-b = data in for bank a, column b.
An interrupted burst is shown, 2 data elements are written.
1 subsequent element of data in is applied in the programmed order following DI a-b.
t
WR
is referenced from the first positive CK edge after the last desired data in pair.
The Precharge command masks the last 2 data elements in the burst, for burst length = 8.
A10 is Low with the Write command (Auto Precharge is disabled).
1 = Can be don't care for programmed burst length of 4.
2 = For programmed burst length of 4, DQS becomes don't care at this point.
3 = These bits are incorrectly written into the memory array if DM is low.
Don’t Care
T1
T2
T3
T4
T5
T6
NOP
NOP
NOP
PRE
Write
NOP
CK
CK
Command
Address
Maximum D
QSS
DI a-b
1
1
2
DQS
DQ
DM
t
DQSS
(max)
t
RP
T1
T2
T3
T4
T5
T6
NOP
NOP
NOP
PRE
Write
NOP
CK
CK
Command
Address
BA a, COL b
BA (a or all)
Minimum D
QSS
t
WR
t
RP
DI a-b
1
1
DQS
DQ
DM
t
DQSS
(min)
2
BA a, COL b
BA (a or all)
t
WR
3
3
3
3
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