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參數(shù)資料
| 型號： | IS45S16100C1-7TLA |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| 中文描述： | 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50 |
| 封裝： | 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-50 |
| 文件頁數(shù)： | 13/81頁 |
| 文件大?。?/td> | 821K |
| 代理商： | IS45S16100C1-7TLA |
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IS45S16100C1
ISSI
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
01/03/06
13
Self-Refresh Command
(
CS
,
RAS
,
CAS
, CKE = LOW,
WE
= HIGH)
This command executes the self-refresh operation. The
row address to be refreshed, the bank, and the refresh
interval are generated automatically internally during this
operation. The self-refresh operation is started by dropping
the CKE pin from HIGH to LOW. The self-refresh operation
continues as long as the CKE pin remains LOW and there
is no need for external control of any other pins. The
self-refresh operation is terminated by raising the CKE pin
from LOW to HIGH. The next command cannot be executed
until the device internal recovery period (t
RC
) has elapsed.
After the self-refresh, since it is impossible to determine
the address of the last row to be refreshed, an auto-refresh
should immediately be performed for all addresses (4096
cycles).
Both banks must be placed in the idle state before
executing this command.
Burst Stop Command
(
CS
,
WE
, = LOW,
RAS
,
CAS
= HIGH)
The command forcibly terminates burst read and write
operations. When this command is executed during a
burst read operation, data output stops after the
CAS
latency period has elapsed.
No Operation
(
CS
, = LOW,
RAS
,
CAS
,
WE
= HIGH)
This command has no effect on the device.
Device Deselect Command
(
CS
= HIGH)
This command does not select the device for an object of
operation. In other words, it performs no operation with
respect to the device.
Power-Down Command
(CKE = LOW)
When both banks are in the idle (inactive) state, or when
at least one of the banks is not in the idle (inactive) state,
this command can be used to suppress device power
dissipation by reducing device internal operations to the
absolute minimum. Power-down mode s started by dropping
the CKE pin from HIGH to LOW. Power-down mode
continues as long as the CKE pin is held low. All pins other
than the CKE pin are invalid and none of the other
commands can be executed in this mode. The power-
down operation is terminated by raising the CKE pin from
LOW to HIGH. The next command cannot be executed
until the recovery period (t
CKA
) has elapsed.
Since this command differs from the self-refresh command
described above in that the refresh operation is not
performed automatically internally, the refresh operation
must be performed within the refresh period (t
REF
). Thus
the maximum time that power-down mode can be held is
just under the refresh cycle time.
Clock Suspend
(CKE = LOW)
This command can be used to stop the device internal
clock temporarily during a read or write cycle. Clock
suspend mode is started by dropping the CKE pin from
HIGH to LOW. Clock suspend mode continues as long as
the CKE pin is held LOW. All input pins other than the CKE
pin are invalid and none of the other commands can be
executed in this mode. Also note that the device internal
state is maintained. Clock suspend mode is terminated by
raising the CKE pin from LOW to HIGH, at which point
device operation restarts. The next command cannot be
executed until the recovery period (t
CKA
) has elapsed.
Since this command differs from the self-refresh command
described above in that the refresh operation is not
performed automatically internally, the refresh operation
must be performed within the refresh period (t
REF
). Thus
the maximum time that clock suspend mode can be held
is just under the refresh cycle time.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS45S16100C1-7TLA1 | 功能描述:動態(tài)隨機(jī)存取存儲器 16M (1Mx16) 143MHz Automotive Temp RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS45S16100C1-7TLA1-TR | 功能描述:動態(tài)隨機(jī)存取存儲器 16M (1Mx16) 143MHz Automotive Temp RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS45S16100E | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM |
| IS45S16100E-6TLA1 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM |
| IS45S16100E-7BLA1 | 功能描述:動態(tài)隨機(jī)存取存儲器 16M (1Mx16) 143MHz S動態(tài)隨機(jī)存取存儲器 3.3v RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
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