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| 型號： | IS45S16100C1-7TLA |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| 中文描述： | 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50 |
| 封裝： | 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-50 |
| 文件頁數(shù)： | 7/81頁 |
| 文件大?。?/td> | 821K |
| 代理商： | IS45S16100C1-7TLA |
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IS45S16100C1
ISSI
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
01/03/06
7
AC CHARACTERISTICS
(1,2,3)
-7
Symbol Parameter
Min.
Max.
Units
t
CK
3
t
CK
2
Clock Cycle Time
CAS
Latency = 3
CAS
Latency = 2
7
8
—
—
ns
ns
t
AC
3
t
AC
2
Access Time From CLK
(4)
CAS
Latency = 3
CAS
Latency = 2
—
—
5.5
6
ns
ns
t
CHI
CLK HIGH Level Width
2.5
—
ns
t
CL
CLK LOW Level Width
2.5
—
ns
t
OH
3
t
OH
2
Output Data Hold Time
CAS
Latency = 3
CAS
Latency = 2
2.0
2.5
—
—
ns
ns
t
LZ
Output LOW Impedance Time
0
—
ns
t
HZ
3
t
HZ
2
t
DS
Output HIGH Impedance Time
(5)
CAS
Latency = 3
CAS
Latency = 2
—
—
2
5.5
6
—
ns
ns
ns
Input Data Setup Time
t
DH
Input Data Hold Time
1
—
ns
t
AS
Address Setup Time
2
—
ns
t
AH
Address Hold Time
1
—
ns
t
CKS
CKE Setup Time
2
—
ns
t
CKH
CKE Hold Time
1
—
ns
t
CKA
CKE to CLK Recovery Delay Time
1CLK+3
—
ns
t
CS
Command Setup Time (
CS
,
RAS
,
CAS
,
WE
, DQM)
2
—
ns
t
CH
Command Hold Time (
CS
,
RAS
,
CAS
,
WE
, DQM)
1
—
ns
t
RC
Command Period (REF to REF / ACT to ACT)
63
—
ns
t
RAS
Command Period (ACT to PRE)
42
100,000
ns
t
RP
Command Period (PRE to ACT)
20
—
ns
t
RCD
Active Command To Read / Write Command Delay Time
16
—
ns
t
RRD
Command Period (ACT [0] to ACT[1])
14
—
ns
t
DPL
3
Input Data To Precharge
Command Delay time
CAS
Latency = 3
1CLK
—
ns
t
DPL
2
CAS
Latency = 2
1CLK
—
ns
t
DAL
3
Input Data To Active / Refresh
Command Delay time (During Auto-Precharge)
CAS
Latency = 3
1CLK+t
RP
—
ns
t
DAL
2
CAS
Latency = 2
1CLK+t
RP
—
ns
t
T
Transition Time
1
10
ns
t
REF
Notes:
1. When power is first applied, memory operation should be started 100 μs after V
DD
and V
DDQ
reach their stipulated voltages. Also note that the
power-on
sequence must be executed before starting memory operation.
2. Measured with t
T
= 1 ns.
3. The reference level is 1.4 V when measuring input signal timing. Rise and fall times are measured between V
IH
(min.) and V
IL
(max.).
4. Access time is measured at 1.4V with the load shown in the figure below.
5. The time t
HZ
(max.) is defined as the time required for the output voltage to transition by ± 200 mV from V
OH
(min.) or V
OL
(max.) when the
output is in the high impedance state.
Refresh Cycle Time (4096)
—
64
ms
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| IS45S16100C1-7TLA1 | 功能描述:動(dòng)態(tài)隨機(jī)存取存儲器 16M (1Mx16) 143MHz Automotive Temp RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS45S16100C1-7TLA1-TR | 功能描述:動(dòng)態(tài)隨機(jī)存取存儲器 16M (1Mx16) 143MHz Automotive Temp RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS45S16100E | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM |
| IS45S16100E-6TLA1 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM |
| IS45S16100E-7BLA1 | 功能描述:動(dòng)態(tài)隨機(jī)存取存儲器 16M (1Mx16) 143MHz S動(dòng)態(tài)隨機(jī)存取存儲器 3.3v RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
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