參數(shù)資料
型號： IS45S16100C1-7TLA
廠商： INTEGRATED SILICON SOLUTION INC
元件分類： DRAM
英文描述： 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
中文描述： 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50
封裝： 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-50
文件頁數(shù)： 16/81頁
文件大?。?/td> 821K
代理商： IS45S16100C1-7TLA
IS45S16100C1
ISSI
16
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
01/03/06
OPERATION COMMAND TABLE
(1,2)
Current State Command
Write With
Auto-Precharge
Operation
CSRASCAS WE
A11 A10A9-A0
DESL
Burst Write Continues, Write Recovery And Precharge
When Done
Burst Write Continues, Write Recovery And Precharge
Illegal
Illegal
Illegal
Illegal(10)
Illegal(10)
Illegal
Illegal
No Operation, Idle State After t
RP
Has Elapsed
No Operation, Idle State After t
RP
Has Elapsed
No Operation, Idle State After t
RP
Has Elapsed
Illegal(10)
Illegal(10)
Illegal(10)
No Operation, Idle State After t
RP
Has Elapsed(10)
Illegal
Illegal
No Operation, Row Active After t
RCD
Has Elapsed
No Operation, Row Active After t
RCD
Has Elapsed
No Operation, Row Active After t
RCD
Has Elapsed
Illegal(10)
Illegal(10)
Illegal(10,14)
Illegal(10)
Illegal
Illegal
No Operation, Row Active After t
DPL
Has ElapsedH
No Operation, Row Active After t
DPL
Has ElapsedL
No Operation, Row Active After t
DPL
Has Elapsed
L
Read Start
Write Restart
Illegal(10)
Illegal(10)
Illegal
Illegal
H
X
X
X
X
X
X
NOP
BST
READ/READA
WRIT/WRITA
ACT
PRE/PALL
REF/SELF
MRS
DESL
NOP
BST
READ/READA
WRIT/WRITA
ACT
PRE/PALL
REF/SELF
MRS
DESL
NOP
BST
READ/READA
WRIT/WRITA
ACT
PRE/PALL
REF/SELF
MRS
DESL
NOP
BST
READ/READA
WRIT/WRITA
ACT
PRE/PALL
REF/SELF
MRS
L
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
L
H
H
H
H
L
L
L
L
X
H
H
H
H
L
L
L
L
X
H
H
H
H
L
L
L
L
X
H
H
H
H
L
L
L
L
H
H
L
L
H
H
L
L
X
H
H
L
L
H
H
L
L
X
H
H
L
L
H
H
L
L
X
H
H
L
L
H
H
L
L
H
L
H
L
H
L
H
L
X
H
L
H
L
H
L
H
L
X
H
L
H
L
H
L
H
L
X
H
L
H
L
H
L
H
L
X
X
V
V
V
V
X
X
X
V
V
V
V
X
X
X
V(18)
V(18)
V(18)
X
X
OPCODE
X
X
X
V
V
V
V
X
OP CODE
X
X
X
V
V V(18)
V V(18)
V
X
OP CODE
X
X
X
X
V
V V(18)
V
V V(18)
V
V V(18)
V
V
X
X
OP CODE
Row Precharge
X
X
X
V
V
V
V
X
X
X
X
V(18)
V(18)
V(18)
X
X
Immediately
Following
Row Active
X
X
X
V
V
V
V
X
X
X
X
V(18)
X
X
Write
Recovery
X
X
X
X
X
L
L
L
L
L
L
X
X
相關(guān)PDF資料
PDF描述
IS45S16100C1-7TLA1 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS45S16400C1 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS45S16400C1-7TA1 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS45S16400C1-7TLA 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS45S16400C1-7TLA1 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS45S16100C1-7TLA1 功能描述:動態(tài)隨機存取存儲器 16M (1Mx16) 143MHz Automotive Temp RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS45S16100C1-7TLA1-TR 功能描述:動態(tài)隨機存取存儲器 16M (1Mx16) 143MHz Automotive Temp RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS45S16100E 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM
IS45S16100E-6TLA1 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM
IS45S16100E-7BLA1 功能描述:動態(tài)隨機存取存儲器 16M (1Mx16) 143MHz S動態(tài)隨機存取存儲器 3.3v RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
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