參數(shù)資料
型號： IS45S16100C1-7TLA
廠商： INTEGRATED SILICON SOLUTION INC
元件分類： DRAM
英文描述： 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
中文描述： 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50
封裝： 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-50
文件頁數(shù)： 81/81頁
文件大?。?/td> 821K
代理商： IS45S16100C1-7TLA
PACKAGING INFORMATION
ISSI
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. F
06/18/03
Copyright 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Plastic TSOP
Package Code: T (Type II)
D
SEATING PLANE
b
e
C
1
N/2
N/2+1
N
E1
A1
A
E
L
α
ZD
.
Notes:
1. Controlling dimension: millimieters,
unless otherwise specified.
2. BSC = Basic lead spacing
between centers.
3. Dimensions D and E1 do not
include mold flash protrusions and
should be measured from the
bottom of the package.
4. Formed leads shall be planar with
respect to one another within
0.004 inches at the seating plane.
Plastic TSOP (T - Type II)
Millimeters
Min
Max
Millimeters
Min
Inches
Min
Inches
Min
Millimeters
Min
Inches
Min
Symbol
Ref. Std.
No. Leads (N)
A
A1
b
C
D
E1
E
e
L
ZD 0.95 REF 0.037 REF 0.81 REF 0.032 REF 0.88 REF 0.035 REF
α
0°
5°
0°
5°
0°
Max
Max
Max
Max
Max
32
44
50
—
0.05
0.30
0.12
20.82 21.08
10.03 10.29
11.56 11.96
1.27 BSC
0.40
1.20
0.15
0.52
0.21
—
0.002
0.012
0.005
0.820
0.391
0.451
0.050 BSC
0.016
0.047
0.006
0.020
0.008
0.830
0.400
0.466
—
0.05
0.30
0.12
18.31
10.03
11.56
0.80 BSC
0.41
1.20
0.15
0.45
0.21
18.52
10.29
11.96
—
0.002 0.006
0.012 0.018
0.005 0.008
0.721 0.729
0.395 0.405
0.455 0.471
0.032 BSC
0.016 0.024
0.047
—
0.05
0.30
0.12
20.82 21.08
10.03 10.29
11.56 11.96
0.80 BSC
0.40
1.20
0.15
0.45
0.21
—
0.002 0.006
0.012 0.018
0.005 0.008
0.820 0.830
0.395 0.405
0.455 0.471
0.031 BSC
0.016 0.024
0.047
0.60
0.024
0.60
0.60
5°
0°
5°
0°
5°
0°
5°
相關(guān)PDF資料
PDF描述
IS45S16100C1-7TLA1 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS45S16400C1 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS45S16400C1-7TA1 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
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IS45S16400C1-7TLA1 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS45S16100C1-7TLA1 功能描述:動態(tài)隨機(jī)存取存儲器 16M (1Mx16) 143MHz Automotive Temp RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS45S16100C1-7TLA1-TR 功能描述:動態(tài)隨機(jī)存取存儲器 16M (1Mx16) 143MHz Automotive Temp RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS45S16100E 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM
IS45S16100E-6TLA1 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM
IS45S16100E-7BLA1 功能描述:動態(tài)隨機(jī)存取存儲器 16M (1Mx16) 143MHz S動態(tài)隨機(jī)存取存儲器 3.3v RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
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