參數(shù)資料
型號: KM44S16020B
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 8M x 4Bit x 2 Banks Synchronous DRAM(8M x 4位 x 2組同步動態(tài)RAM)
中文描述: 8米× 4位× 2銀行同步DRAM(8米× 4位× 2組同步動態(tài)RAM)的
文件頁數(shù): 35/43頁
文件大?。?/td> 597K
代理商: KM44S16020B
ELECTRONICS
REV. 2 Mar. '98
TIMING DIAGRAM - II
CMOS SDRAM
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
Read & Write Cycle with Auto Precharge I @Burst Length=4
HIGH
Row Active
(A-Bank)
: Don't care
*Note:
¨
When Read(Write) command with auto precharge is issued at A-Bank after A and B Bank activation.
- if Read(Write) command without auto precharge is issued at B-Bank before A Bank auto precharge starts, A Bank
auto precharge will start at B Bank read command input point .
- any command can not be issued at A Bank during tRP after A Bank auto precharge starts.
Row Active
(B-Bank)
Read with
Auto Pre
charge
(A-Bank)
Write with
Auto Precharge
(A-Bank)
Row Active
(A-Bank)
BA
A
10
/AP
CL=2
CL=3
DQ
ADDR
CAS
RAS
CS
CKE
CLOCK
WE
DQM
Qa0
Qa1
Qb0
Qb1
Qa0
Qa1
Qb0
Qb1
Ra
Rb
Ca
Ra
Rb
Ra
Cb
Qb2
Qb3
Read without Auto
precharge(B-Bank)
Auto Precharge
Start Point
(A-Bank)*
¨
Precharge
(B-Bank)
Da0
Da1
Da0
Da1
Qb2
Qb3
Ca
Ra
相關(guān)PDF資料
PDF描述
KM44S4020CT 2M x 4Bit x 2 Banks Synchronous DRAM(2M x 4位 x 2組同步動態(tài)RAM)
KM44S64230A 16M x 4Bit x 4 Banks Synchronous DRAM(16M x 4位 x 4組同步動態(tài)RAM)
KM44V1000D 1M x 4Bit CMOS Dynamic RAM with Fast Page Mode(1M x 4位CMOS 動態(tài)RAM(帶快速頁模式))
KM44V16000B 16M x 4Bit CMOS Dynamic RAM with Fast Page Mode(16M x 4位CMOS 動態(tài)RAM(帶快速頁模式))
KM44V16100B 16M x 4Bit CMOS Dynamic RAM with Fast Page Mode(16M x 4位CMOS 動態(tài)RAM(帶快速頁模式))
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