參數(shù)資料
型號(hào): KM44S16020B
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 8M x 4Bit x 2 Banks Synchronous DRAM(8M x 4位 x 2組同步動(dòng)態(tài)RAM)
中文描述: 8米× 4位× 2銀行同步DRAM(8米× 4位× 2組同步動(dòng)態(tài)RAM)的
文件頁(yè)數(shù): 36/43頁(yè)
文件大?。?/td> 597K
代理商: KM44S16020B
ELECTRONICS
REV. 2 Mar. '98
TIMING DIAGRAM - II
CMOS SDRAM
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
Read & Write Cycle with Auto Precharge II @Burst Length=4
HIGH
Row Active
(A-Bank)
: Don't care
*Note :
¨
Any command to A-bank is not allowed in this period.
tRP is determined from at auto precharge start point
Read with
Auto Precharge
(A-Bank)
Auto Precharge
Start Point
(A-Bank)
Row Active
(B-Bank)
Read with
Auto Precharge
(B-Bank)
BA
A
10
/AP
CL=2
CL=3
DQ
ADDR
CAS
RAS
CS
CKE
CLOCK
WE
DQM
Qa0
Qa1
Qa2
Qa3
Qa0
Qa1
Qa2
Qa3
Qb0
Qb1
Qb2
Qb3
Qb0
Qb1
Qb2
Qb3
Ra
Ca
Ra
Cb
Rb
Rb
*
¨
Auto Precharge
Start Point
(B-Bank)
相關(guān)PDF資料
PDF描述
KM44S4020CT 2M x 4Bit x 2 Banks Synchronous DRAM(2M x 4位 x 2組同步動(dòng)態(tài)RAM)
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