參數(shù)資料
型號: M25PE40VMN6G
廠商: 意法半導體
元件分類: DRAM
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位統(tǒng)一部門,串行閃存
文件頁數(shù): 46/60頁
文件大?。?/td> 315K
代理商: M25PE40VMN6G
DC and AC parameters
M25PE40
46/60
11
DC and AC parameters
This section summarizes the operating and measurement conditions, and the DC and AC
characteristics of the device. The parameters in the DC and AC Characteristic tables that
follow are derived from tests performed under the Measurement Conditions summarized in
the relevant tables. Designers should check that the operating conditions in their circuit
match the measurement conditions when relying on the quoted parameters.
Table 14.
Table 15.
Figure 25.
AC measurement I/O waveform
Table 16.
Operating conditions
Symbol
Parameter
Min.
Max.
Unit
V
CC
Supply Voltage
2.7
3.6
V
T
A
Ambient Operating Temperature
–40
85
°C
Measurement conditions
(1)
1.
Output Hi-Z is defined as the point where data out is no longer driven.
Symbol
Parameter
Min.
Max.
Unit
C
L
Load Capacitance
30
pF
Input Rise and Fall Times
5
ns
Input Pulse Voltages
0.2V
CC
to 0.8V
CC
V
Input and Output Timing Reference Voltages
0.3V
CC
to 0.7V
CC
V
Capacitance
(1)
1.
Sampled only, not 100% tested, at T
A
=25°C and a frequency of 20 MHz.
Symbol
Parameter
Test Condition
Min
.
Max
.
Unit
C
OUT
Output Capacitance (Q)
V
OUT
= 0V
8
pF
C
IN
Input Capacitance (other pins)
V
IN
= 0V
6
pF
AI00825B
0.8VCC
0.2VCC
0.7VCC
0.3VCC
Input and Output
Timing Reference Levels
Input Levels
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