參數(shù)資料
型號(hào): M25PE40VMN6G
廠商: 意法半導(dǎo)體
元件分類: DRAM
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位統(tǒng)一部門,串行閃存
文件頁數(shù): 17/60頁
文件大?。?/td> 315K
代理商: M25PE40VMN6G
M25PE40
Memory organization
17/60
5
Memory organization
The memory is organized as:
2048 pages (256 bytes each)
524,288 bytes (8 bits each)
128 subsectors (32 Kbits, 4096 bytes each)
8 sectors (512 Kbits, 65536 bytes each)
Each page can be individually:
programmed (bits are programmed from 1 to 0)
erased (bits are erased from 0 to 1)
written (bits are changed to either 0 or 1)
The device is Page or Sector Erasable (bits are erased from 0 to 1).
Table 4.
Memory organization
Sector Subsector
Address Range
Sector Subsector
Address Range
7
127
7F000h
7FFFFh
0
15
0F000h
0FFFFh
.
.
.
.
.
.
112
70000h
70FFFh
4
04000h
04FFFh
6
111
6F000h
6FFFFh
3
03000h
03FFFh
.
.
.
2
02000h
02FFFh
96
60000h
60FFFh
1
01000h
01FFFh
5
95
5F000h
5FFFFh
0
00000h
00FFFh
.
.
.
80
50000h
50FFFh
4
79
4F000h
4FFFFh
.
.
.
64
40000h
40FFFh
3
63
3F000h
3FFFFh
.
.
.
48
30000h
30FFFh
2
47
2F000h
2FFFFh
.
.
.
32
20000h
20FFFh
1
31
1F000h
1FFFFh
.
.
.
16
10000h
10FFFh
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