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參數(shù)資料
| 型號： | M25PE40VMN6G |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 49/60頁 |
| 文件大?。?/td> | 315K |
| 代理商： | M25PE40VMN6G |
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M25PE40
DC and AC parameters
49/60
Table 19.
AC characteristics (33 MHz operation)
33MHz only available for products marked since week 40 of 2005
(1)
Test conditions specified in
Table 14
and
Table 15
Symbol
Alt.
Parameter
Min.
Typ.
Max.
Unit
f
C
f
C
Clock Frequency for the following
instructions: FAST_READ, PW, PP, PE, SE,
DP, RDP, WREN, WRDI, RDSR
D.C.
33
MHz
f
R
Clock Frequency for READ instructions
D.C.
20
MHz
t
CH (2)
t
CL (2)
t
CLH
Clock High Time
13
ns
t
CLL
Clock Low Time
13
ns
Clock Slew Rate
2
(peak to peak)
0.1
V/ns
t
SLCH
t
CSS
S Active Setup Time (relative to C)
10
ns
t
CHSL
S Not Active Hold Time (relative to C)
10
ns
t
DVCH
t
DSU
Data In Setup Time
3
ns
t
CHDX
t
DH
Data In Hold Time
5
ns
t
CHSH
S Active Hold Time (relative to C)
5
ns
t
SHCH
S Not Active Setup Time (relative to C)
5
ns
t
SHSL
t
SHQZ (3)
t
CSH
S Deselect Time
100
ns
t
DIS
Output Disable Time
12
ns
t
CLQV
t
V
Clock Low to Output Valid
12
ns
t
CLQX
t
HO
Output Hold Time
0
ns
t
THSL
Top Sector Lock Setup Time
50
ns
t
SHTL
t
DP (3)
t
RDP (3)
Top Sector Lock Hold Time
100
ns
S to Deep Power-down
3
μ
s
S High to Standby Power mode
30
μ
s
t
PW
(4)
Page Write Cycle Time (256 bytes)
11
25
ms
Page Write Cycle Time (n bytes)
10.2+
n*0.8/256
t
PP
(4)
Page Program Cycle Time (256 bytes)
1.2
5
ms
Page Program Cycle Time (n bytes)
0.4+
n*0.8/256
t
PE
Page Erase Cycle Time
10
20
ms
t
SE
Sector Erase Cycle Time
1
5
s
1.
Details of how to find the date of marking are given in Application Note, AN1995.
2.
t
CH
+ t
CL
must be greater than or equal to 1/ f
C
Value guaranteed by characterization, not 100% tested in production.
3.
4.
When using PP and PW instructions to update consecutive bytes, optimized timings are obtained with one sequence
including all the bytes versus several sequences of only a few bytes. (1
≤
n
≤
256)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M25PE40VMN6P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE40VMN6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE40VMN6TP | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE40VMP6G | 1A Standard Fixed Output LDO Regulators with Shutdown Switch; Package: TO220FP-5; Constitution materials list: Packing style: Tube packaging; Package quantity: 50; Minimum package quantity: 500; |
| M25PE40VMP6P | 4 Mbit Uniform Sector, Serial Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25PE40-VMN6G | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:4 Mbit, page-erasable serial Flash memory with byte alterability, 75 MHz SPI bus, standard pinout |
| M25PE40VMN6P | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout |
| M25PE40-VMN6P | 制造商:Micron Technology Inc 功能描述:NOR Flash Serial-SPI 3.3V 4Mbit 512K x 8bit 8ns 8-Pin SOIC N Tray 制造商:Micron Technology Inc 功能描述:FLASH SERL-SPI 3.3V 4MBIT 512KX8 15NS 8SOIC N - Trays 制造商:Micron Technology 功能描述:NOR Flash Serial-SPI 3.3V 4Mbit 512K x 8bit 8ns 8-Pin SOIC N Tray |
| M25PE40VMN6TG | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout |
| M25PE40-VMN6TG | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:4 Mbit, page-erasable serial Flash memory with byte alterability, 75 MHz SPI bus, standard pinout |
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