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參數(shù)資料
| 型號(hào)： | M25PE40VMN6G |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 23/60頁 |
| 文件大小： | 315K |
| 代理商： | M25PE40VMN6G |
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M25PE40
Instructions
23/60
6.3
Read Identification (RDID)
The Read Identification (RDID) instruction allows the 8-bit manufacturer identification to be
read, followed by two bytes of device identification. The manufacturer identification is
assigned by JEDEC, and has the value 20h for STMicroelectronics. The device identification
is assigned by the device manufacturer, and indicates the memory type in the first byte
(80h), and the memory capacity of the device in the second byte (13h).
Any Read Identification (RDID) instruction while an Erase or Program cycle is in progress, is
not decoded, and has no effect on the cycle that is in progress.
The device is first selected by driving Chip Select (S) Low. Then, the 8-bit instruction code
for the instruction is shifted in. This is followed by the 24-bit device identification, stored in
the memory, being shifted out on Serial Data Output (Q), each bit being shifted out during
the falling edge of Serial Clock (C).
The instruction sequence is shown in
Figure 9
The Read Identification (RDID) instruction is terminated by driving Chip Select (S) High at
any time during data output.
When Chip Select (S) is driven High, the device is put in the Standby Power mode. Once in
the Standby Power mode, the device waits to be selected, so that it can receive, decode and
execute instructions.
Table 6.
Figure 9.
Read Identification (RDID) instruction sequence and Data-out sequence
Read Identification (RDID) Data-out sequence
Manufacturer identification
Device identification
Memory type
Memory capacity
20h
80h
13h
C
D
S
2
1
3
4
5
6
7
8
9 10 11 12 13 14 15
Instruction
0
AI06809b
Q
Manufacturer Identification
High Impedance
MSB
15 14 13
3
2
1
0
Device Identification
MSB
16 17 18
28 29 30 31
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M25PE40VMN6P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE40VMN6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE40VMN6TP | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE40VMP6G | 1A Standard Fixed Output LDO Regulators with Shutdown Switch; Package: TO220FP-5; Constitution materials list: Packing style: Tube packaging; Package quantity: 50; Minimum package quantity: 500; |
| M25PE40VMP6P | 4 Mbit Uniform Sector, Serial Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25PE40-VMN6G | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:4 Mbit, page-erasable serial Flash memory with byte alterability, 75 MHz SPI bus, standard pinout |
| M25PE40VMN6P | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout |
| M25PE40-VMN6P | 制造商:Micron Technology Inc 功能描述:NOR Flash Serial-SPI 3.3V 4Mbit 512K x 8bit 8ns 8-Pin SOIC N Tray 制造商:Micron Technology Inc 功能描述:FLASH SERL-SPI 3.3V 4MBIT 512KX8 15NS 8SOIC N - Trays 制造商:Micron Technology 功能描述:NOR Flash Serial-SPI 3.3V 4Mbit 512K x 8bit 8ns 8-Pin SOIC N Tray |
| M25PE40VMN6TG | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout |
| M25PE40-VMN6TG | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:4 Mbit, page-erasable serial Flash memory with byte alterability, 75 MHz SPI bus, standard pinout |
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