參數(shù)資料
型號: M36DR432D
廠商: 意法半導體
英文描述: 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
中文描述: 32兆位的2Mb x16插槽,雙行,頁閃存和4兆位256K x16的SRAM,多個存儲產(chǎn)品
文件頁數(shù): 19/46頁
文件大?。?/td> 330K
代理商: M36DR432D
19/46
M36DR432C, M36DR432D
COMMON FLASH INTERFACE (CFI)
The Common Flash Interface (CFI) specification is
a JEDEC approved, standardised data structure
that can be read from the Flash memory device.
CFI allows a system software to query the flash
device to determine various electrical and timing
parameters, density information and functions
supported by the device. CFI allows the system to
easily interface to the Flash memory, to learn
about its features and parameters, enabling the
software to configure itself when necessary.
Tables 18, 19, 20, and 21 show the address used
to retrieve each data.
The CFI data structure gives information on the
device, such as the sectorization, the command
set and some electrical specifications. Tables 18,
19, 20, and 21 show the addresses used to re-
trieve each data. The CFI data structure contains
also a security area; in this section, a 64 bit unique
security number is written, starting at address 81h.
This area can be accessed only in read mode and
there are no ways of changing the code after it has
been written by ST. Write a read instruction to re-
turn to Read mode. Refer to the CFI Query instruc-
tion to understand how the M36DR432 enters the
CFI Query mode.
Table 18. Query Structure Overview
Note: The Flash memory display the CFI data structure when CFI Query command is issued. In this table are listed the main sub-sections
detailed in Tables 19, 20 and 21. Query data are always presented on the lowest order data outputs.
Table 19. CFI Query Identification String
Note: 1. Query data are always presented on the lowest - order data outputs (DQ7-DQ0) only. DQ8-DQ15 are ‘0’.
2. t.b.a. to be announced.
Offset
Sub-section Name
Description
00h
Reserved
Reserved for algorithm-specific information
10h
CFI Query Identification String
Command set ID and algorithm data offset
1Bh
System Interface Information
Device timing & voltage information
27h
Device Geometry Definition
Flash device layout
P
Primary Algorithm-specific Extended Query table
Additional information specific to the Primary
Algorithm (optional)
A
Alternate Algorithm-specific Extended Query table
Additional information specific to the Alternate
Algorithm (optional)
Offset
Data
Description
00h
0020h
Manufacturer Code
01h
t.b.a.
(2)
Device Code
02h-0Fh
reserved
Reserved
10h
0051h
Query Unique ASCII String "QRY"
11h
0052h
Query Unique ASCII String "QRY"
12h
0059h
Query Unique ASCII String "QRY"
13h
0002h
Primary Algorithm Command Set and Control Interface ID code 16 bit ID code
defining a specific algorithm
14h
0000h
15h
offset = P = 0040h
Address for Primary Algorithm extended Query table
16h
0000h
17h
0000h
Alternate Vendor Command Set and Control Interface ID Code second vendor
- specified algorithm supported (note: 0000h means none exists)
18h
0000h
19h
value = A = 0000h
Address for Alternate Algorithm extended Query table
note: 0000h means none exists
1Ah
0000h
相關PDF資料
PDF描述
M36L0R7040B0 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package
M36L0R7040B0ZAQE 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package
M36L0R7040B0ZAQF 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package
M36L0R7040B0ZAQT 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package
M36L0R7040T0 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package
相關代理商/技術參數(shù)
參數(shù)描述
M36DR432DA10ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36DR432DA85ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36DR432DZA 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36DR432-ZAT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36DR864CB85ZA6 功能描述:閃存 64M (4Mx16) 85ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel