參數(shù)資料
型號： M36DR432D
廠商： 意法半導(dǎo)體
英文描述： 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
中文描述： 32兆位的2Mb x16插槽，雙行，頁閃存和4兆位256K x16的SRAM，多個存儲產(chǎn)品
文件頁數(shù)： 30/46頁
文件大?。?/td> 330K
代理商： M36DR432D
M36DR432C, M36DR432D
30/46
Table 28. Flash Read and Write AC Characteristics, RPF Related
(T
A
= –40 to 85°C; V
DDF
= 1.9V to 2.1V)
Figure 11. Flash Read and Write AC Waveforms, RPF Related
Symbol
Alt
Parameter
Test Condition
Flash
Unit
85
100
Min
Max
Min
Max
t
PHQ7V1
RPF High to Data Valid (Read
Mode)
150
150
ns
t
PHQ7V2
RPF High to Data Valid
(Power Down enabled)
50
50
μs
t
PLPH
t
RP
RPF Pulse Width
100
100
ns
t
PLQ7V
RPF Low to Reset Complete
During Program/Erase
15
15
μs
AI90212
DQ7
WF
RPF
tPLPH
tPHQ7V1,2
VALID
READ
DQ7
VALID
tPLQ7V
PROGRAM / ERASE
相關(guān)PDF資料
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M36L0R7040B0 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M36DR432DA10ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36DR432DA85ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36DR432DZA 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36DR432-ZAT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36DR864CB85ZA6 功能描述:閃存 64M (4Mx16) 85ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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