參數(shù)資料
型號(hào)： M36DR432D
廠商： 意法半導(dǎo)體
英文描述： 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
中文描述： 32兆位的2Mb x16插槽，雙行，頁(yè)閃存和4兆位256K x16的SRAM，多個(gè)存儲(chǔ)產(chǎn)品
文件頁(yè)數(shù)： 24/46頁(yè)
文件大?。?/td> 330K
代理商： M36DR432D
M36DR432C, M36DR432D
24/46
Table 24. DC Characteristics
(T
A
= –40 to 85°C; V
DDF
= V
DDS
= 1.9V to 2.1V)
Symbol
Parameter
Input Leakage
Current
Output Leakage
Current
Device
Flash &
SRAM
Flash &
SRAM
Test Condition
Min
Typ
Max
Unit
I
LI
0V
≤
V
IN
≤
V
DD
±2
μA
I
LO
0V
≤
V
OUT
≤
V
DD
±10
μA
I
DDS
V
DD
Standby
Current
Flash
EF = V
DDF
± 0.2V
V
DDF
= V
DD
max
15
50
μA
SRAM
E1S
≥
V
DDS
– 0.2V, E2S
≤
V
DDS
– 0.2V,
V
IN
≥
V
DDS
– 0.2V
or V
IN
≤
V
DDS
– 0.2V, f=0
20
50
μA
I
DDD
Supply Current
(Reset)
Flash
RPF = V
SSF
± 0.2V
2
10
μA
I
DD
Supply Current
SRAM
I
IO
= 0 mA, E1S = V
IL
, E2S = WS = V
IH
,
V
IN
= V
IL
or V
IH
, V
DDS
= V
DD
max,
cycle time = 1μs
I
IO
= 0 mA, E1S = V
IL
, E2S = WS = V
IH
,
V
IN
= V
IL
or V
IH
, V
DDS
= V
DD
max,
min cycle time
1
2
mA
7
15
mA
I
DDR
Supply Current
(Read)
Supply Current
(Program)
Supply Current
(Dual Bank)
Supply Current
(Erase)
Supply Current
(Erase Suspend)
Supply Current
(Program
Suspend)
Flash
EF = V
IL
, GF = V
IH
, f = 5 MHz
10
20
mA
I
DDW
Flash
Program in progress
10
20
mA
I
DDWD
Flash
Program/Erase in progress in one bank
Read in the other bank
20
40
mA
I
DDE
Flash
Erase in progress
10
20
mA
I
DDES(1)
Flash
Erase Suspend in progress
50
μA
I
DDWS(1)
Flash
Program Suspend in progress
50
μA
I
PPS
Program Current
(Standby)
Flash
V
PPF
≤
V
DDS
V
PPF
= 12V ± 0.6V
V
PPF
≤
V
DDS
V
PPF
= 12V ± 0.6V
V
PPF
= 12V ± 0.6V
Program in progress
0.2
5
μA
100
400
μA
I
PPR
Program Current
(Read)
Flash
0.2
5
μA
100
400
μA
I
PPW
Program Current
(Program)
Flash
5
10
mA
I
PPE
Program Current
(Erase)
Flash
V
PPF
= 12V ± 0.6V
Program in progress
5
10
mA
V
IL
Input Low Voltage
Flash &
SRAM
Flash &
SRAM
–0.5
0.4
V
V
IH
Input High
Voltage
1.4
V
DD
+0.2
V
V
OL
Output Low
Voltage
Flash &
SRAM
V
DDF
= V
DDS
= V
DD
min
I
OL
= 100μA
V
DDF
= V
DDS
= V
DD
min
I
OH
= –100μA
0.2
V
V
OH
Output High
Voltage
Flash &
SRAM
V
DD
–0.1
V
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