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參數(shù)資料
| 型號： | M36DR432D |
| 廠商： | 意法半導體 |
| 英文描述： | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| 中文描述： | 32兆位的2Mb x16插槽，雙行，頁閃存和4兆位256K x16的SRAM，多個存儲產(chǎn)品 |
| 文件頁數(shù)： | 31/46頁 |
| 文件大小： | 330K |
| 代理商： | M36DR432D |
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M36DR432C, M36DR432D
Table 29. Flash Program, Erase Times and Program, Erase Endurance Cycles
(T
A
= –40 to 85°C; V
DDF
= 1.9V to 2.1V, V
PPF
= V
DDF
unless otherwise specified)
Note: 1. Max values refer to the maximum time allowed by the internal algorithm before error bit is set. Worst case conditions program or
erase should perform significantly better.
2. Excludes the time needed to execute the sequence for program instruction.
Table 30. Flash Data Polling and Toggle Bits AC Characteristics
(1)
(T
A
= –40 to 85 °C; V
DDF
= 1.9V to 2.1V)
Note: 1. All other timings are defined in Read AC Characteristics table.
Parameter
Min
Max
(1)
Typ
Typical after
100k W/E Cycles
Unit
Parameter Block (4 KWord) Erase (Preprogrammed)
2.5
0.15
0.4
s
Main Block (32 KWord) Erase (Preprogrammed)
10
1
3
s
Bank Erase (Preprogrammed, Bank A)
2
6
s
Bank Erase (Preprogrammed, Bank B)
10
30
s
Chip Program
(2)
20
25
s
Chip Program (DPG, V
PP
= 12V)
(2)
10
s
Word Program
200
10
10
μs
Program/Erase Cycles (per Block)
100,000
cycles
Symbol
Parameter
Flash
Unit
Min
Max
t
EHQ7V
Chip Enable High to DQ7 Valid (Program, EF Controlled)
10
200
μs
Chip Enable High to DQ7 Valid (Block Erase, EF Controlled)
1
10
s
t
EHQV
Chip Enable High to Output Valid (Program)
10
200
μs
Chip Enable High to Output Valid (Block Erase)
1
10
s
t
Q7VQV
Q7 Valid to Output Valid (Data Polling)
0
ns
t
WHQ7V
Write Enable High to DQ7 Valid (Program, WF Controlled)
10
200
μs
Write Enable High to DQ7 Valid (Block Erase, WF
Controlled)
1
10
s
t
WHQV
Write Enable High to Output Valid (Program)
10
200
μs
Write Enable High to Output Valid (Block Erase)
1
10
s
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相關代理商/技術參數(shù) |
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|---|---|
| M36DR432DA10ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| M36DR432DA85ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| M36DR432DZA | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| M36DR432-ZAT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| M36DR864CB85ZA6 | 功能描述:閃存 64M (4Mx16) 85ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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