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參數(shù)資料
| 型號： | M36DR432D |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| 中文描述： | 32兆位的2Mb x16插槽，雙行，頁閃存和4兆位256K x16的SRAM，多個(gè)存儲產(chǎn)品 |
| 文件頁數(shù)： | 4/46頁 |
| 文件大?。?/td> | 330K |
| 代理商： | M36DR432D |
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M36DR432C, M36DR432D
4/46
Table 2. Absolute Maximum Ratings
(1)
Note: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions
above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating condi-
tions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant qual-
ity documents.
2. Minimum voltage may undershoot to –2V during transition and for less than 20ns.
3. Depends on range.
4. V
DD
= V
DDS
= V
DDF
.
Figure 4. Functional Block Diagram
Symbol
Parameter
Value
Unit
T
A
Ambient Operating Temperature
(3)
–40 to 85
°C
T
BIAS
Temperature Under Bias
–40 to 125
°C
T
STG
Storage Temperature
–55 to 150
°C
V
IO(2)
Input or Output Voltage
–0.2 to V
DD(4)
+ 0.3
V
V
DDF
Flash Chip Supply Voltage
–0.5 to 2.7
V
V
DDS
SRAM Chip Supply Voltage
–0.2 to 2.6
V
V
PPF
Program Voltage
–0.5 to 13.0
V
AI90205
Flash Memory
32 Mbit (x16)
VSSF
EF
GF
WF
RPF
WPF
E1S
E2S
GS
WS
UBS
LBS
DQ0-DQ15
VDDF
VPPF
A18-A20
A0-A17
SRAM
4 Mbit (x16)
VSSS
VDDS
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相關(guān)代理商/技術(shù)參數(shù) |
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| M36DR432DA10ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| M36DR432DA85ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| M36DR432DZA | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| M36DR432-ZAT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| M36DR864CB85ZA6 | 功能描述:閃存 64M (4Mx16) 85ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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