參數(shù)資料
型號: M58WR064HU70ZB6U
元件分類: PROM
英文描述: 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA44
封裝: 7.70 X 9 MM, 0.50 MM PITCH, ROHS COMPLIANT, VFBGA-44
文件頁數(shù): 31/117頁
文件大小: 2300K
代理商: M58WR064HU70ZB6U
Command interface
M58WR064HU M58WR064HL
4
Command interface
All Bus Write operations to the memory are interpreted by the Command Interface.
Commands consist of one or more sequential Bus Write operations. An internal
Program/Erase Controller handles all timings and verifies the correct execution of the
Program and Erase commands. The Program/Erase Controller provides a Status Register
whose output may be read at any time to monitor the progress or the result of the operation.
The Command Interface is reset to read mode when power is first applied, when exiting
from Reset or whenever VDD is lower than VLKO. Command sequences must be followed
exactly. Any invalid combination of commands will reset the device to read mode.
Refer to Table 4: Command codes, and Appendix D, Tables 43, 44, 45 and 46, Command
Interface States - Modify and Lock Tables, for a summary of the Command Interface.
The Command Interface is split into two types of commands: Standard commands and
Factory Program commands. The following sections explain in detail how to perform each
command.
Table 4.
Command codes
Hex Code
Command
01h
Block Lock Confirm
03h
Set Configuration Register Confirm
10h
Alternative Program Setup
20h
Block Erase Setup
2Fh
Block Lock-Down Confirm
30h
Enhanced Factory Program Setup
35h
Double Word Program Setup
40h
Program Setup
50h
Clear Status Register
56h
Quadruple Word Program Setup
60h
Block Lock Setup, Block Unlock Setup, Block Lock Down Setup and Set
Configuration Register Setup
70h
Read Status Register
75h
Quadruple Enhanced Factory Program Setup
80h
Bank Erase Setup
90h
Read Electronic Signature
98h
Read CFI Query
B0h
Program/Erase Suspend
C0h
Protection Register Program
D0h
Program/Erase Resume, Block Erase Confirm, Bank Erase Confirm, Block
Unlock Confirm or Enhanced Factory Program Confirm
FFh
Read Array
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