參數(shù)資料
型號: M58WR064HU70ZB6U
元件分類: PROM
英文描述: 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA44
封裝: 7.70 X 9 MM, 0.50 MM PITCH, ROHS COMPLIANT, VFBGA-44
文件頁數(shù): 8/117頁
文件大?。?/td> 2300K
代理商: M58WR064HU70ZB6U
M58WR064HU M58WR064HL
Flowcharts and pseudo codes
Figure 28.
Erase Suspend & Resume flowchart and pseudo code
1. The Read Status Register command (Write 70h) can be issued just before or just after the Erase Resume command.
Write 70h
AI10116b
Read Status
Register
YES
NO
SR7 = 1
YES
NO
SR6 = 1
Erase Continues with
Bank in Read Status
Register Mode
Write D0h
Read data from another block
or
Program/Protection Register Program
or
Block Lock/Unlock/Lock-Down
Start
Write B0h
Erase Complete
Write FFh
Read Data
Write FFh
erase_suspend_command ( ) {
writeToFlash (bank_address, 0xB0) ;
writeToFlash (bank_address, 0x70) ;
/* read status register to check if
erase has already completed */
do {
status_register=readFlash (bank_address) ;
/* E or G must be toggled*/
} while (status_register.SR7== 0) ;
if (status_register.SR6==0) /*erase completed */
{ writeToFlash (bank_address, 0xFF) ;
read_data ( ) ;
/*The device returns to Read Array
(as if program/erase suspend was not issued).*/
}
else
{ writeToFlash (bank_address, 0xFF) ;
read_program_data ( );
/*read or program data from another block*/
writeToFlash (bank_address, 0xD0) ;
/*write 0xD0 to resume erase*/
writeToFlash (bank_address, 0x70) ;
/*read status register to check if erase has completed */
}
Write 70h(1)
相關(guān)PDF資料
PDF描述
M59DR032F100N1T 2M X 16 FLASH 1.8V PROM, 100 ns, PDSO48
M5F7924 24 V FIXED NEGATIVE REGULATOR, PSFM3
M5F7920 20 V FIXED NEGATIVE REGULATOR, PSFM3
M5F7918 18 V FIXED NEGATIVE REGULATOR, PSFM3
M5F7915 15 V FIXED NEGATIVE REGULATOR, PSFM3
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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