參數(shù)資料
型號(hào): M58WR064HU70ZB6U
元件分類(lèi): PROM
英文描述: 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA44
封裝: 7.70 X 9 MM, 0.50 MM PITCH, ROHS COMPLIANT, VFBGA-44
文件頁(yè)數(shù): 40/117頁(yè)
文件大?。?/td> 2300K
代理商: M58WR064HU70ZB6U
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M58WR064HU M58WR064HL
Command interface - Factory program commands
29/117
6
Command interface - Factory program commands
The Factory Program commands are used to speed up programming. They require VPP to
be at VPPH. Refer to Table 7: Factory Program commands, in conjunction with the following
text descriptions.
6.0.1
Bank Erase command
The Bank Erase command can be used to erase a bank. It sets all the bits within the
selected bank to ’1’. All previous data in the bank is lost. The Bank Erase command will
ignore any protected blocks within the bank. If all blocks in the bank are protected then the
Bank Erase operation will abort and the data in the bank will not be changed. The Status
Register will not output any error. Bank Erase operations can be performed at both
VPP = VPPH and V PP = VDD
Two Bus Write cycles are required to issue the command.
The first bus cycle sets up the Bank Erase command.
The second latches the bank address in the Program/Erase Controller and starts it.
If the second bus cycle is not Write Bank Erase Confirm (D0h), Status Register bits SR4 and
SR5 are set and the command aborts. Erase aborts if Reset turns to VIL. As data integrity
cannot be guaranteed when the Erase operation is aborted, the bank must be erased again.
Once the command is issued the device outputs the Status Register data when any address
within the bank is read. At the end of the operation the bank will remain in Read Status
Register mode until a Read Array, Read CFI Query or Read Electronic Signature command
is issued.
During Bank Erase operations the bank being erased will only accept the Read Array, Read
Status Register, Read Electronic Signature and Read CFI Query command, all other
commands will be ignored. A Bank Erase operation cannot be suspended.
Dual Operations are not supported during Bank Erase operations and the command cannot
be suspended. Typical Erase times are given in Table 16: Program, erase times and
相關(guān)PDF資料
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M59DR032F100N1T 2M X 16 FLASH 1.8V PROM, 100 ns, PDSO48
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