參數(shù)資料
型號: MRF6S20010GNR1
廠商: 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述: RF Power Field Effect Transistors
中文描述: 射頻功率場效應(yīng)晶體管
文件頁數(shù): 16/24頁
文件大?。?/td> 591K
代理商: MRF6S20010GNR1
16
RF Device Data
Freescale Semiconductor
MRF6S20010NR1 MRF6S20010GNR1
GSM EDGE TYPICAL CHARACTERISTICS
— 1805-1880 MHz
G
p
,
I
f, FREQUENCY (MHz)
13
1800
10
G
ps
V
DD
= 28 Vdc
I
DQ
= 130 mA
17
50
16
40
15
30
14
20
1900
IRL
Figure 25. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ P
out
= 4 Watts
30
0
10
20
40
η
D
η
D
,
1810 1820 1830 1840 1850 1860 1870 1880 1890
Figure 26. Error Vector Magnitude and Drain
Efficiency versus Output Power
P
out
, OUTPUT POWER (WATTS) AVG.
10
2
6
V
DD
= 28 Vdc
I
DQ
= 130 mA
f = 1840 MHz
4
3
0
1
0.1
1
20
60
40
30
0
10
EVM
η
D
η
D
,
E
50
5
10
80
50
0.1
P
out
, OUTPUT POWER (WATTS)
Figure 27. Spectral Regrowth at 400 kHz and
600 kHz versus Output Power
55
60
65
70
75
1
V
DD
= 28 Vdc
I
DQ
= 130 mA
f = 1840 MHz
S
SR @ 400 kHz
SR @ 600 kHz
Figure 28. EDGE Spectrum
10
20
30
40
50
60
70
80
90
100
200 kHz
Span 2 MHz
Center 1.96 GHz
110
400 kHz
600 kHz
400 kHz
600 kHz
(
Reference Power
VBW = 30 kHz
Sweep Time = 70 ms
RBW = 30 kHz
GSM EDGE TEST SIGNAL
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