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參數(shù)資料
| 型號： | MRF6S20010GNR1 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | RF Power Field Effect Transistors |
| 中文描述： | 射頻功率場效應(yīng)晶體管 |
| 文件頁數(shù)： | 7/24頁 |
| 文件大?。?/td> | 591K |
| 代理商： | MRF6S20010GNR1 |
MRF6S20010NR1 MRF6S20010GNR1
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
— 2110-2170 MHz
30
47
P3dB = 41.5 dBm (14.2 W)
P
in
, INPUT POWER (dBm)
V
DD
= 28 Vdc, I
DQ
= 130 mA
Pulsed CW, 8
μ
sec(on), 1 msec(off)
f = 2170 MHz
45
43
41
39
35
22
24
26
Actual
Ideal
28
20
Figure 8. Pulse CW Output Power versus
Input Power
P
o
,
P1dB = 40.9 dBm (12.26 W)
30
11
18
0.1
0
70
T
C
= 30 C
25 C
30 C
10
1
16
15
14
12
50
40
20
10
P
out
, OUTPUT POWER (WATTS) CW
Figure 9. Power Gain and Drain Efficiency
versus CW Output Power
G
p
,
G
ps
85 C
25 C
85 C
V
DD
= 28 Vdc
I
DQ
= 130 mA
f = 2170 MHz
η
D
η
D
,
D
P
out
, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain versus Output Power
16 V
I
DQ
= 130 mA
f = 2170 MHz
V
DD
= 12 V
10
16
0
18
13
11
14
6
9
12
G
p
,
21
15
3
20 V
24 V
28 V
32 V
36
27
400
15
6
S21
f, FREQUENCY (MHz)
Figure 11. Broadband Frequency Response
S11
18
3
9
0
0
3
18
6
27
12
3200
2800
2400
2000
1600
1200
800
V
DD
= 28 Vdc
P
out
= 10 W (PEP)
I
DQ
= 130 mA
S
S
37
17
13
60
30
15
12
9
9
210
10
8
90
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 12. MTTF Factor versus Junction Temperature
This above graph displays calculated MTTF in hours x ampere
2
drain current. Life tests at elevated temperatures have correlated to
better than
±
10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
D2
for MTTF in a particular application.
10
7
10
6
10
5
120
140
160
180 190
M
2
)
100
200
170
150
130
110
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6S20010GNR1-CUT TAPE | 制造商:Freescale 功能描述:MRF6S20010 Series 1.6 to 2.2 GHz 28 V 10 W RF Power N-Ch Mosfet - TO-270 |
| MRF6S20010NR1 | 功能描述:射頻MOSFET電源晶體管 HV6 2GHZ 10W TO270-2 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S20010NR1_09 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S21050LR3 | 功能描述:射頻MOSFET電源晶體管 HV6 W-CDMA 11.5W NI400L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S21050LR3_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
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