參數(shù)資料
型號(hào)： MT46V4M32
廠商： Micron Technology, Inc.
英文描述： DOUBLE DATA RATE DDR SDRAM
中文描述： 雙倍數(shù)據(jù)速率的DDR SDRAM內(nèi)存
文件頁(yè)數(shù)： 32/66頁(yè)
文件大?。?/td> 1921K
代理商： MT46V4M32
32
128Mb: x32 DDR SDRAM
4M32DDR_B.p65 – Rev. B, Pub. 7/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2002, Micron Technology, Inc.
128Mb: x32
DDR SDRAM
ADVANCE
Figure 22
WRITE to PRECHARGE – Uninterrupting
t
DQSS (NOM)
CK
CK#
COMMAND
WRITE
NOP
NOP
NOP
PRE
7
NOP
ADDRESS
Bank
a
,
Col
b
Bank,
(
a
or
all
)
NOP
T0
T1
T2
T3
T2n
T4
T5
NOTE
: 1. DI
b
= data-in for column
b
.
2. Three subsequent elements of data-in are applied in the programmed order following DI
b
.
3. An uninterrupted burst of 4 is shown.
4.tWR is referenced from the first positive CK edge after the last data-in pair.
5. The PRECHARGE and WRITE commands are to the same bank. However, the PRECHARGE and WRITE commands may
be to different devices, in which case tWR is not required and the PRECHARGE command could be applied earlier.
6. A8 is LOW with the WRITE command (auto precharge is disabled).
7. PRE = PRECHARGE command.
T1n
T6
t
WR
t
RP
DQ
DQS
DM
DI
b
t
DQSS (MIN)
DQ
DQS
DM
DI
b
t
DQSS (MAX)
DQ
DQS
DM
DI
b
DON T CARE
TRANSITIONING DATA
t
DQSS
t
DQSS
t
DQSS
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