參數(shù)資料
型號(hào): MT46V4M32
廠商: Micron Technology, Inc.
英文描述: DOUBLE DATA RATE DDR SDRAM
中文描述: 雙倍數(shù)據(jù)速率的DDR SDRAM內(nèi)存
文件頁數(shù): 39/66頁
文件大小: 1921K
代理商: MT46V4M32
39
128Mb: x32 DDR SDRAM
4M32DDR_B.p65 – Rev. B, Pub. 7/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2002, Micron Technology, Inc.
128Mb: x32
DDR SDRAM
ADVANCE
TRUTH TABLE 4 – CURRENT STATE BANK
n
– COMMAND TO BANK
m
(Notes: 1-6; notes appear below and on next page)
CURRENT STATE CS# RAS# CAS# WE#
Any
H
L
Idle
X
Row
L
Activating,
L
Active, or
L
Precharging
L
Read
L
(Auto-
L
Precharge
L
Disabled)
L
Write
L
(Auto-
L
Precharge
L
Disabled)
L
Read
L
(With Auto-
L
Precharge)
L
L
Write
L
(With Auto-
L
Precharge)
L
L
COMMAND/ACTION
DESELECT (NOP/continue previous operation)
NO OPERATION (NOP/continue previous operation)
Any Command Otherwise Allowed to Bank m
ACTIVE (select and activate row)
READ (select column and start READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE
ACTIVE (select and activate row)
READ (select column and start new READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE
ACTIVE (select and activate row)
READ (select column and start READ burst)
WRITE (select column and start new WRITE burst)
PRECHARGE
ACTIVE (select and activate row)
READ (select column and start new READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE
ACTIVE (select and activate row)
READ (select column and start READ burst)
WRITE (select column and start new WRITE burst)
PRECHARGE
NOTES
X
H
X
L
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
X
H
X
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
H
X
H
X
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
7
7
7
7, 9
7, 8
7
7
7, 9
7
7
NOTE:
1. This table applies when CKE
n-1
was HIGH and CKE
n
is HIGH (see Truth Table 2) and after
t
XSNR has been
met (if the previous state was self refresh).
2. This table describes alternate bank operation, except where noted (i.e., the current state is for bank
n
and
the commands shown are those allowed to be issued to bank
m,
assuming that bank m is in such a state
that the given command is allowable). Exceptions are covered in the notes below.
相關(guān)PDF資料
PDF描述
MT46V4M32LG I.MX31 LITE KIT
MT46V64M4 16 Meg x 4 x 4 banks DDR SDRAM(16M x 4 x 4組,雙數(shù)據(jù)速率同步動(dòng)態(tài)RAM)
MT46V64M8 16 Meg x 8 x 4 banks DDR SDRAM(16M x 8 x 4組,雙數(shù)據(jù)速率同步動(dòng)態(tài)RAM)
MT48LC16M8A1TG SYNCHRONOUS DRAM
MT48LC32M4A1 ECONOLINE: RSZ/P - 1kVDC
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT46V4M32LG 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DOUBLE DATA RATE DDR SDRAM
MT46V64M16 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DOUBLE DATA RATE (DDR) SDRAM