參數(shù)資料
型號(hào): NT5TU64M16DG-3C
廠商: NANYA TECHNOLOGY CORP
元件分類: DRAM
英文描述: 64M X 16 DDR DRAM, 0.45 ns, PBGA84
封裝: GREEN, BGA-84
文件頁(yè)數(shù): 64/85頁(yè)
文件大小: 2622K
代理商: NT5TU64M16DG-3C
NT5TU256M4GE / NT5TU128M8GE / NT5TU64M16GG
1Gb DDR2 SDRAM
67
REV 1.0
06 / 2010
IDD Specifications and Measurement Conditions
IDD Specifications
(VDDQ = 1.8V ± 0.1V; VDD = 1.8V ± 0.1V)
Symbol
Parameter/Condition
I/O
DDR2-667
-3C
DDR2-800
-AD
Unit
Notes
IDD0
Operating Current
x4x8/ x16
65/-
70/-
mA
1,2
IDD1
Operating Current
x4x8/ x16
75/-
85/-
mA
1,2
IDD2P Precharge Power-Down Current
x4x8/ x16
7/-
mA
1,2
IDD2N Precharge Standby Current
x4x8/ x16
30/-
40/-
mA
1,2
IDD2Q Precharge Quiet Standby Current
x4x8/ x16
30/-
35/-
mA
1,2
IDD3P
Active Power-Down
Standby Current
x4x8/ x16
All
25/-
30/-
mA
1,2
x4x8/ x16
8/-
mA
1,2
IDD3N Active Standby Current
x4x8/ x16
45/-
50/-
mA
1,2
IDD4R Operating Current Burst Read
x4x8/ x16
100/-
120/-
mA
1,2
IDD4W Operating Current Burst Write
x4x8/ x16
100/-
120/-
mA
1,2
IDD5B Burst Auto-Refresh Current
x4x8/ x16
160/-
175/-
mA
1,2
IDD6
Self-Refresh Current for standard products
x4x8/ x16
7/-
mA
1,2
IDD7
Operating Current
x4x8/ x16
210/-
250/-
mA
1,2
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PDF描述
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