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| 型號： | P12C508 |
| 廠商： | Microchip Technology Inc. |
| 英文描述： | 8-Pin, 8-Bit CMOS Microcontroller |
| 中文描述： | 8引腳，8位CMOS微控制器 |
| 文件頁數(shù)： | 54/84頁 |
| 文件大小： | 526K |
| 代理商： | P12C508 |
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PIC12C5XX
DS40139A-page 54
Advance Information
1996 Microchip Technology Inc.
10.1
DC CHARACTERISTICS:
PIC12508/509 (Commercial)
PIC12508/509 (Industrial)
DC Characteristics
Power Supply Pins
Standard Operating Conditions (unless otherwise specified)
Operating Temperature
0
°
C
≤
T
A
≤
+70
°
C (commercial)
–40
°
C
≤
T
A
≤
+85
°
C (industrial)
Characteristic
Sym
Min
Typ
(1)
Max
Units
Conditions
Supply Voltage
RAM Data Retention
Voltage
(2)
V
DD
Start Voltage to ensure
Power-on Reset
V
DD
Rise Rate to ensure
Power-on Reset
V
DD
V
DR
2.5
5.5
V
V
F
OSC
= DC to 4 MHz
Device in SLEEP mode
1.5*
V
POR
V
SS
V
See section on Power-on Reset for details
S
VDD
0.05*
V/ms
See section on Power-on Reset for details
Supply Current
(3)
I
DD
—
—
—
—
1.8
1.8
15
19
2.4
2.4
27
35
mA
mA
μ
A
μ
A
XT and EXTRC options (Note 4)
F
OSC
= 4 MHz, V
DD
= 5.5 V
INTRC Option
F
OSC
= 4 MHz, V
DD
= 5.5 V
LP O
PTION
, Commercial Temperature
F
OSC
= 32 kHz, V
DD
= 3.0 V, WDT disabled
LP O
PTION
, Industrial Temperature
F
OSC
= 32 kHz, V
DD
= 3.0 V, WDT disabled
Power-Down Current
(5)
WDT Enabled
WDT Disabled
I
PD
—
—
—
—
4
5
0.25
0.3
12
14
4
5
μ
A
μ
A
μ
A
μ
A
V
DD
= 3.0 V, Commercial
V
DD
= 3.0 V, Industrial
V
DD
= 3.0 V, Commercial
V
DD
= 3.0 V, Industrial
* These parameters are characterized but not tested.
Note 1: Data in the Typical (“Typ”) column is based on characterization results at 25
°
C. This data is for design guid-
ance only and is not tested.
2: This is the limit to which V
DD
can be lowered in SLEEP mode without losing RAM data.
3: The supply current is mainly a function of the operating voltage and frequency. Other factors such as bus
loading, oscillator type, bus rate, internal code execution pattern, and temperature also have an impact on
the current consumption.
a) The test conditions for all I
DD
measurements in active operation mode are:
OSC1 = external square wave, from rail-to-rail; all I/O pins tristated, pulled to
V
ss
, T0CKI = V
DD
, MCLR = V
DD
; WDT enabled/disabled as specified.
b) For standby current measurements, the conditions are the same, except that
the device is in SLEEP mode.
4: Does not include current through Rext. The current through the resistor can be estimated by the
formula: I
R
= V
DD
/2Rext (mA) with Rext in kOhm.
5: The power down current in SLEEP mode does not depend on the oscillator type. Power down current is mea-
sured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to V
DD
or V
SS
.
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