參數(shù)資料
型號： PSD813FN
英文描述： Field Programmble Microcontroller Peripherals(帶閃存的現(xiàn)場可編程微控制器)
中文描述： 場可編程微控制器外圍設(shè)備（帶閃存的現(xiàn)場可編程微控制器）
文件頁數(shù)： 83/83頁
文件大?。?/td> 369K
代理商： PSD813FN
Prelimnary
PSD813FN/FH
83
Device Operation
(cont.)
Instructions and Commands
(cont.)
J
Erase Resume (ER) Instruction
If an Erase Suspend instruction was previously executed, the erase operation may be
resumed by giving the command 30h, at any address, and without any coded cycles.
J
Programmng
The memory can be programmed byte-byte. The program sequence is started by the
two coded cycles, followed by writing the Program command (0A0h) to the Command
Interface. This is followed by writing the address and data byte to the memory. The
Program/Erase Controller automatically starts and performs the programming after the
fourth write operation. During programming the memory status is checked by reading
the status bits D5, D6 and D7 which show the status of the P/E.C. D6 and D7
determine if programming is on going or has completed and D5 allows a check to be
made for any possible error.
Power Up
The memory Command Interface is reset on power up to Read Array. Either CSF or WRF
must be tied to V
IH
during Power-up to allow maximum security and the possibility to write a
command on the first rising edge of CSF or WRF. Any write cycle initiation is blocked when
V
CC
is below V
LKO
.
Supply Rails
Normal precautions must be taken for supply voltage decoupling. Each device in a system
should have the V
CC
rail decoupled with a 0.1 μF capacitor close to the V
CC
and V
SS
pins.
The PCB trace widths should be sufficient to carry V
CC
program and erase currents as
required.
Appendix A –
Flash Memory
(cont.)
Parameter
Min
Typ
Max
Unit
Chip Program (Byte)
6
sec
Bulk Erase (Preprogrammed)
2.5
30
sec
Bulk Erase
8.5
sec
Sector Erase (Preprogrammed)
1
30
sec
Sector Erase
1.5
sec
Byte Program
10
1200
μs
Program/Erase Cycles (per Sector)
100,000
cycles
Table 6. Program Erase Times and Program Erase Endurance Cycles
(T
A
= 0 to 70°C; V
CC
= 5 V ± 10% or 5 V ± 5%)
Product
Revisions
Revision
Reason
Data Sheet
Changes
Original
PSD813FN/FH
(10/97)
Initial release
–
Product
Revisions
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PSD813FN-15J 制造商:WSI 功能描述:
PSD833F2-90J 功能描述:CPLD - 復(fù)雜可編程邏輯器件 5.0V 1M 90ns RoHS:否 制造商:Lattice 系列: 存儲類型:EEPROM 大電池數(shù)量:128 最大工作頻率:333 MHz 延遲時間:2.7 ns 可編程輸入/輸出端數(shù)量:64 工作電源電壓:3.3 V 最大工作溫度:+ 90 C 最小工作溫度:0 C 封裝 / 箱體:TQFP-100
PSD833F2-90JI 功能描述:SPLD - 簡單可編程邏輯器件 5.0V 1M 90ns RoHS:否 制造商:Texas Instruments 邏輯系列:TICPAL22V10Z 大電池數(shù)量:10 最大工作頻率:66 MHz 延遲時間:25 ns 工作電源電壓:4.75 V to 5.25 V 電源電流:100 uA 最大工作溫度:+ 75 C 最小工作溫度:0 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:DIP-24
PSD833F2-90M 功能描述:SPLD - 簡單可編程邏輯器件 5.0V 1M 90ns RoHS:否 制造商:Texas Instruments 邏輯系列:TICPAL22V10Z 大電池數(shù)量:10 最大工作頻率:66 MHz 延遲時間:25 ns 工作電源電壓:4.75 V to 5.25 V 電源電流:100 uA 最大工作溫度:+ 75 C 最小工作溫度:0 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:DIP-24
PSD833F2-90MI 功能描述:CPLD - 復(fù)雜可編程邏輯器件 5.0V 1M 90ns RoHS:否 制造商:Lattice 系列: 存儲類型:EEPROM 大電池數(shù)量:128 最大工作頻率:333 MHz 延遲時間:2.7 ns 可編程輸入/輸出端數(shù)量:64 工作電源電壓:3.3 V 最大工作溫度:+ 90 C 最小工作溫度:0 C 封裝 / 箱體:TQFP-100
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