參數資料
型號: PSD834F2V
英文描述: Flash PSD, 3.3V Supply, for 8-bit MCUs 2 Mbit + 256 Kbit Dual Flash Memories and 64 Kbit SRAM(2M位+256K位雙路閃速存儲器和64K位靜態(tài)RAM,閃速PSD,3.3V電源,用于8位MCU.)
中文描述: 閃光私營部門,3.3V電源,為8位微控制器2兆256千位雙閃存和64千位的SRAM(200萬位256K位雙路閃速存儲器和64K的位靜態(tài)內存,閃速私營部門,3.3V的電源,用于8位微控制器。)
文件頁數: 19/89頁
文件大小: 522K
代理商: PSD834F2V
19/89
PSD834F2V
Programming Flash Memory
Flash memory must be erased prior to being pro-
grammed. A byte of Flash memory is erased to all
1s (FFh), and is programmed by setting selected
bits to 0. The MCU may erase Flash memory all at
once or by-sector, but not byte-by-byte. However,
the MCU may program Flash memory byte-by-
byte.
The primary and secondary Flash memories re-
quire the MCU to send an instruction to program a
byte or to erase sectors (see Table 7).
Once theMCU issues a Flash memoryProgram or
Erase instruction, it must check for the status bits
for completion. Theembedded algorithms that are
invoked inside the PSD support several means to
provide status to the MCU. Status maybe checked
using any of three methods: Data Polling, Data
Toggle, or Ready/Busy (PC3).
Data Polling.
Polling on the Data Polling Flag
(DQ7) bit is a method of checking whether a Pro-
gram orErase cycle is in progress or has complet-
ed. Figure 4 shows the Data Polling algorithm.
When the MCU issues a Program instruction, the
embedded algorithm within the PSD begins. The
MCU then reads the location of the byte to be pro-
grammed in Flash memory to check status. The
Data Polling Flag (DQ7) bit of this location be-
comes the complement of b7 of the original data
byte to be programmed. The MCU continues to
poll this location, comparing the Data Polling Flag
(DQ7) bit and monitoring the Error Flag (DQ5) bit.
When the Data Polling Flag (DQ7) bit matches b7
of the original data, and the Error Flag (DQ5) bit
remains 0, the embedded algorithm is complete. If
the Error Flag (DQ5) bit is 1, the MCU should test
the Data Polling Flag (DQ7) bit again since the
Data Polling Flag (DQ7) bit may have changed si-
multaneously with the Error Flag (DQ5) bit (see
Figure 4).
The Error Flag (DQ5) bit is set if either an internal
time-out occurred while the embedded algorithm
attempted to program the byte or if the MCU at-
tempted toprogram a 1 to a bit that was not erased
(not erased is logic 0).
It issuggested (as withall Flash memories)to read
the location again after the embedded program-
ming algorithm has completed, to compare the
byte that was written to the Flash memory with the
byte that was intended to be written.
When using the Data Polling method during an
Erase cycle, Figure 4 still applies. However, the
Data Polling Flag (DQ7) bit is 0 until the Erase cy-
cle is complete. A 1 on the Error Flag (DQ5) bit in-
dicates a time-out condition on the Erase cycle; a
0 indicates no error. The MCU can read any loca-
tion within the sector being erased to get the Data
Polling Flag (DQ7) bit andthe Error Flag (DQ5)bit.
PSDsoft Express generates ANSI C code func-
tions which implement these Data Polling algo-
rithms.
Figure 4. Data Polling Flowchart
Data Toggle.
Checking the Toggle Flag (DQ6) bit
is a method of determining whether a Program or
Erase cycle is in progress or has completed. Fig-
ure 5 shows the Data Toggle algorithm.
When the MCU issues a Program instruction, the
embedded algorithm within the PSD begins. The
MCU then reads the location of the byte to be pro-
grammed in Flash memory to check status. The
Toggle Flag (DQ6) bit of this location toggles each
time the MCU reads this location until the embed-
ded algorithm is complete. The MCU continues to
read this location, checking the Toggle Flag (DQ6)
bit and monitoring the Error Flag (DQ5) bit. When
the Toggle Flag (DQ6) bit stops toggling (twocon-
secutive reads yield the same value), and the Er-
ror Flag (DQ5) bit remains 0, the embedded
algorithm is complete. If the Error Flag (DQ5) bit is
1, the MCU should test the Toggle Flag (DQ6) bit
again, since the Toggle Flag (DQ6) bit may have
changed simultaneously with the Error Flag (DQ5)
bit (see Figure 5).
READ DQ5 &
DQ7
at VALID ADDRESS
START
READ DQ7
FAIL
PASS
AI01369B
DQ7
DATA
YES
NO
YES
NO
DQ5
= 1
DQ7
DATA
YES
NO
相關PDF資料
PDF描述
PSD834F2 Flash In-System Programmable (ISP) Peripherals For 8-bit MCUs(用于8位MCUs的閃速ISP外圍)
PSD835G2 Configurable Memory System on a Chip for 8-Bit Microcontrollers(8位微控制器片上存儲器可編程外設)
PSD835G2 100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA Tabless package; Similar to IRHMJ57160 with optional Total Dose Rating of 1000kRads
PSD835G2V 150V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package. Also available with 300 kRads Total Dose Rating.; Similar to IRHNA67164 with optional Total Dose Rating of 300 kRads.
PSD835G2-B-12B81 Configurable Memory System on a Chip for 8-Bit Microcontrollers
相關代理商/技術參數
參數描述
PSD834F2V-15J 功能描述:CPLD - 復雜可編程邏輯器件 3.0V 2M 150ns RoHS:否 制造商:Lattice 系列: 存儲類型:EEPROM 大電池數量:128 最大工作頻率:333 MHz 延遲時間:2.7 ns 可編程輸入/輸出端數量:64 工作電源電壓:3.3 V 最大工作溫度:+ 90 C 最小工作溫度:0 C 封裝 / 箱體:TQFP-100
PSD834F2V-15M 功能描述:CPLD - 復雜可編程邏輯器件 3.0V 2M 150ns RoHS:否 制造商:Lattice 系列: 存儲類型:EEPROM 大電池數量:128 最大工作頻率:333 MHz 延遲時間:2.7 ns 可編程輸入/輸出端數量:64 工作電源電壓:3.3 V 最大工作溫度:+ 90 C 最小工作溫度:0 C 封裝 / 箱體:TQFP-100
PSD834F2V-20JI 功能描述:CPLD - 復雜可編程邏輯器件 3.0V 2M 200ns RoHS:否 制造商:Lattice 系列: 存儲類型:EEPROM 大電池數量:128 最大工作頻率:333 MHz 延遲時間:2.7 ns 可編程輸入/輸出端數量:64 工作電源電壓:3.3 V 最大工作溫度:+ 90 C 最小工作溫度:0 C 封裝 / 箱體:TQFP-100
PSD834F2V-20MI 功能描述:SPLD - 簡單可編程邏輯器件 3.0V 2M 200ns RoHS:否 制造商:Texas Instruments 邏輯系列:TICPAL22V10Z 大電池數量:10 最大工作頻率:66 MHz 延遲時間:25 ns 工作電源電壓:4.75 V to 5.25 V 電源電流:100 uA 最大工作溫度:+ 75 C 最小工作溫度:0 C 安裝風格:Through Hole 封裝 / 箱體:DIP-24
PSD835G2-70U 功能描述:靜態(tài)隨機存取存儲器 5.0V 4M 70ns RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray