參數資料
型號： PSD834F2V
英文描述： Flash PSD, 3.3V Supply, for 8-bit MCUs 2 Mbit + 256 Kbit Dual Flash Memories and 64 Kbit SRAM(2M位+256K位雙路閃速存儲器和64K位靜態(tài)RAM,閃速PSD,3.3V電源,用于8位MCU.)
中文描述： 閃光私營部門，3.3V電源，為8位微控制器2兆256千位雙閃存和64千位的SRAM（200萬位256K位雙路閃速存儲器和64K的位靜態(tài)內存，閃速私營部門，3.3V的電源，用于8位微控制器。）
文件頁數： 9/89頁
文件大小： 522K
代理商： PSD834F2V
9/89
PSD834F2V
In-System Programming (ISP)
Using the JTAG signals on Port C, the entire PSD
device can be programmed or erased without the
use of the MCU. The primary Flash memory can
also be programmed in-system by the MCU exe-
cuting the programming algorithms out of the sec-
ondary
memory, or
SRAM.
The
secondary
memory can be programmed the same way by ex-
ecuting out of the primary Flash memory. The PLD
or other PSD Configuration blocks can be pro-
grammed through the JTAG port or a device pro-
grammer. Table 3 indicates which programming
methods can program different functional blocks
of the PSD.
Table 3. Methods of Programming Different Functional Blocks of the PSD
Power Management Unit (PMU)
The Power Management Unit (PMU) gives the
user controlof the power consumptionon selected
functional blocks based on system requirements.
The PMU includes an Automatic Power-down
(APD) Unit that turns off device functions during
MCU inactivity. The APD Unit has a Power-down
mode that helps reduce power consumption.
The PSD alsohas some bits that are configured at
run-time by the MCU to reduce power consump-
tion of the CPLD. The Turbo bit in PMMR0 can be
reset to 0 and the CPLD latches its outputs and
goes to sleep until the next transition on itsinputs.
Additionally, bits in PMMR2 can be set by the
MCU to block signals from entering the CPLD to
reduce power consumption. Please see the sec-
tion entitled “Power Management” on page 55 for
more details.
Functional Block
JTAG Programming
Device Programmer
IAP
Primary Flash Memory
Yes
Yes
Yes
Secondary Flash Memory
Yes
Yes
Yes
PLD Array (DPLD and CPLD)
Yes
Yes
No
PSD Configuration
Yes
Yes
No
相關PDF資料
PDF描述
PSD834F2 Flash In-System Programmable (ISP) Peripherals For 8-bit MCUs(用于8位MCUs的閃速ISP外圍)
PSD835G2 Configurable Memory System on a Chip for 8-Bit Microcontrollers(8位微控制器片上存儲器可編程外設)
PSD835G2 100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA Tabless package; Similar to IRHMJ57160 with optional Total Dose Rating of 1000kRads
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PSD835G2-B-12B81 Configurable Memory System on a Chip for 8-Bit Microcontrollers
相關代理商/技術參數
參數描述
PSD834F2V-15J 功能描述:CPLD - 復雜可編程邏輯器件 3.0V 2M 150ns RoHS:否 制造商:Lattice 系列: 存儲類型:EEPROM 大電池數量:128 最大工作頻率:333 MHz 延遲時間:2.7 ns 可編程輸入/輸出端數量:64 工作電源電壓:3.3 V 最大工作溫度:+ 90 C 最小工作溫度:0 C 封裝 / 箱體:TQFP-100
PSD834F2V-15M 功能描述:CPLD - 復雜可編程邏輯器件 3.0V 2M 150ns RoHS:否 制造商:Lattice 系列: 存儲類型:EEPROM 大電池數量:128 最大工作頻率:333 MHz 延遲時間:2.7 ns 可編程輸入/輸出端數量:64 工作電源電壓:3.3 V 最大工作溫度:+ 90 C 最小工作溫度:0 C 封裝 / 箱體:TQFP-100
PSD834F2V-20JI 功能描述:CPLD - 復雜可編程邏輯器件 3.0V 2M 200ns RoHS:否 制造商:Lattice 系列: 存儲類型:EEPROM 大電池數量:128 最大工作頻率:333 MHz 延遲時間:2.7 ns 可編程輸入/輸出端數量:64 工作電源電壓:3.3 V 最大工作溫度:+ 90 C 最小工作溫度:0 C 封裝 / 箱體:TQFP-100
PSD834F2V-20MI 功能描述:SPLD - 簡單可編程邏輯器件 3.0V 2M 200ns RoHS:否 制造商:Texas Instruments 邏輯系列:TICPAL22V10Z 大電池數量:10 最大工作頻率:66 MHz 延遲時間:25 ns 工作電源電壓:4.75 V to 5.25 V 電源電流:100 uA 最大工作溫度:+ 75 C 最小工作溫度:0 C 安裝風格:Through Hole 封裝 / 箱體:DIP-24
PSD835G2-70U 功能描述:靜態(tài)隨機存取存儲器 5.0V 4M 70ns RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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