參數(shù)資料
型號(hào)： PSD834F2V
英文描述： Flash PSD, 3.3V Supply, for 8-bit MCUs 2 Mbit + 256 Kbit Dual Flash Memories and 64 Kbit SRAM(2M位+256K位雙路閃速存儲(chǔ)器和64K位靜態(tài)RAM,閃速PSD,3.3V電源,用于8位MCU.)
中文描述： 閃光私營(yíng)部門(mén)，3.3V電源，為8位微控制器2兆256千位雙閃存和64千位的SRAM（200萬(wàn)位256K位雙路閃速存儲(chǔ)器和64K的位靜態(tài)內(nèi)存，閃速私營(yíng)部門(mén)，3.3V的電源，用于8位微控制器。）
文件頁(yè)數(shù)： 24/89頁(yè)
文件大小： 522K
代理商： PSD834F2V
PSD834F2V
24/89
Figure 6. Priority Level of Memory and I/O
Components
Figure 6 shows the priority levels for all memory
components. Anycomponent on a higher level can
overlap and has priority over any component on a
lower level. Components on the same level must
not overlap. Level one has the highest priority and
level 3 has the lowest.
Memory Select Configuration for MCUs with
Separate Program and Data Spaces.
The 8031
and compatible family of MCUs, which includes
the 80C51, 80C151, 80C251, and 80C51XA, have
separate address spaces for Program memory
(selected using Program Select Enable (PSEN,
CNTL2)) and Data memory (selected using Read
Strobe (RD, CNTL1)). Any of the memories within
the PSD can residein either spaceorboth spaces.
This is controlled through manipulation of the VM
register that resides in the CSIOP space.
The VM register is set using PSDsoft Express to
have an initial value. It can subsequently be
changed by the MCU so that memory mapping
can be changed on-the-fly.
For example, youmay wish to haveSRAM and pri-
mary Flash memory in the Data space atBoot-up,
and secondary Flash memory in the Program
space at Boot-up, and later swap the primary and
secondary Flash memories. This is easily done
with the VM register by using PSDsoft Express
Configuration to configure it for Boot-up and hav-
ing the MCU change it when desired.
Table 11 describes the VM Register.
Table 11. VM Register
Level
1
SRAM, I/O,
or
Peripheral I/O
Level
2
Secondary
Non-Volatile Memory
Highest Priority
Lowest Priority
Level
3
Primary Flash Memory
AI02867D
Bit 7
PIO_EN
Bit 6
Bit 5
Bit 4
Primary
FL_Data
Bit 3
Secondary
EE_Data
Bit 2
Primary
FL_Code
Bit 1
Secondary
EE_Code
Bit 0
SRAM_Code
0 =disable
PIO mode
not used
not used
0 = RD
can’t
access
Flash
memory
0 = RD can’t
access Secondary
Flash memory
0 = PSEN
can’t
access
Flash
memory
0 = PSEN can’t
access Secondary
Flash memory
0 = PSEN
can’t
access
SRAM
1= enable
PIO mode
not used
not used
1 = RD
access
Flash
memory
1 = RD access
Secondary Flash
memory
1 = PSEN
access
Flash
memory
1 = PSEN access
Secondary Flash
memory
1 = PSEN
access
SRAM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PSD834F2V-15J 功能描述:CPLD - 復(fù)雜可編程邏輯器件 3.0V 2M 150ns RoHS:否 制造商:Lattice 系列: 存儲(chǔ)類型:EEPROM 大電池?cái)?shù)量:128 最大工作頻率:333 MHz 延遲時(shí)間:2.7 ns 可編程輸入/輸出端數(shù)量:64 工作電源電壓:3.3 V 最大工作溫度:+ 90 C 最小工作溫度:0 C 封裝 / 箱體:TQFP-100
PSD834F2V-15M 功能描述:CPLD - 復(fù)雜可編程邏輯器件 3.0V 2M 150ns RoHS:否 制造商:Lattice 系列: 存儲(chǔ)類型:EEPROM 大電池?cái)?shù)量:128 最大工作頻率:333 MHz 延遲時(shí)間:2.7 ns 可編程輸入/輸出端數(shù)量:64 工作電源電壓:3.3 V 最大工作溫度:+ 90 C 最小工作溫度:0 C 封裝 / 箱體:TQFP-100
PSD834F2V-20JI 功能描述:CPLD - 復(fù)雜可編程邏輯器件 3.0V 2M 200ns RoHS:否 制造商:Lattice 系列: 存儲(chǔ)類型:EEPROM 大電池?cái)?shù)量:128 最大工作頻率:333 MHz 延遲時(shí)間:2.7 ns 可編程輸入/輸出端數(shù)量:64 工作電源電壓:3.3 V 最大工作溫度:+ 90 C 最小工作溫度:0 C 封裝 / 箱體:TQFP-100
PSD834F2V-20MI 功能描述:SPLD - 簡(jiǎn)單可編程邏輯器件 3.0V 2M 200ns RoHS:否 制造商:Texas Instruments 邏輯系列:TICPAL22V10Z 大電池?cái)?shù)量:10 最大工作頻率:66 MHz 延遲時(shí)間:25 ns 工作電源電壓:4.75 V to 5.25 V 電源電流:100 uA 最大工作溫度:+ 75 C 最小工作溫度:0 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:DIP-24
PSD835G2-70U 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 5.0V 4M 70ns RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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