Lucent Technologies Inc.
15
Data Sheet
August 1999
Termination Impedance, and Hybrid Balance
T7507 Quad PCM Codec with Filters,
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are
absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in
excess of those given in the operational sections of this data sheet. Exposure to absolute maximum ratings for
extended periods can adversely affect device reliability.
Handling Precautions
Although protection circuitry has been designed into this device, proper precautions should be taken to avoid expo-
sure to electrostatic discharge (ESD) during handling and mounting. Lucent employs a human-body model (HBM)
and a charged-device model (CDM) for ESD-susceptibility testing and protection design evaluation. ESD voltage
thresholds are dependent on the circuit parameters used to define the model. No industry-wide standard has been
adopted for CDM. However, a standard HBM (resistance = 1500
, capacitance = 100 pF) is widely used and
therefore can be used for comparison purposes. The HBM ESD threshold presented here was obtained by using
these circuit parameters:
Electrical Characteristics
Specifications apply for T
A
= –40 °C to +85 °C, V
DD
= 5 V ± 5%, MCLK = 2.048 MHz, and GND = 0 V, unless other-
wise noted.
dc Characteristics
Table 8. Digital Interface
Parameter
Symbol
T
stg
V
DD
—
P
D
Min
–55
—
–0.5
—
Max
150
6.5
Unit
°C
V
V
mW
Storage Temperature Range
Power Supply Voltage
Voltage on Any Pin with Respect to Ground
Maximum Power Dissipation (package limit)
0.5 + V
DD
600
HBM ESD Threshold Voltage
Device
T7507
Rating
>2000 V
Parameter
Symbol
V
IL
V
IH
I
I
I
I
I
I
Test Conditions
All digital inputs
All digital inputs
Min
—
2.0
–10
2
–2
Typ
—
—
—
—
—
Max
0.8
—
10
150
–150
Unit
V
V
μA
μA
μA
Input Low Voltage
Input High Voltage
Input Current
Input Current, Pins with Pull-up (
CSEL
)
Input Current, Pins with Pull-down
(FSEP, IFS)
Output Low Voltage
Output High Voltage
Any digital input GND < V
IN
< V
DD
Any digital input GND < V
IN
< V
DD
Any digital input GND < V
IN
< V
DD
V
OL
V
OH
DxEN
, D
X
= 3.2 mA
D
X
= –3.2 mA
D
X
= –320 μA
DxEN
, D
X
—
—
2.4
3.5
–30
—
—
—
—
—
—
0.4
—
—
30
5
V
V
V
μA
pF
Output Current in High-impedance State
Input Capacitance
I
OZ
C
I