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參數(shù)資料
| 型號： | T8534 |
| 英文描述： | T8533/34 Quad Programmable Line Card Signal Processor |
| 中文描述： | T8533/34四線卡可編程信號處理器 |
| 文件頁數(shù)： | 27/48頁 |
| 文件大小： | 890K |
| 代理商： | T8534 |
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Preliminary Data Sheet
July 2001
Signal Processor
T8533/34 Quad Programmable Line Card
Agere Systems Inc.
27
Operating Ranges
Handling Precautions
Although protection circuitry has been designed into this device, proper precautions should be taken to avoid expo-
sure to electrostatic discharge (ESD) during handling and mounting. Agere Systems Inc. employs a human-body
model (HBM) and a charged-device model (CDM) for ESD susceptibility testing and protection design evaluation.
ESD voltage thresholds are dependent on the circuit parameters used to define the model. No industry-wide stan-
dard has been adopted for the CDM. A standard HBM (resistance = 1500
, capacitance = 100 pF) is widely
accepted and can be used for comparison. The HBM ESD threshold of >1000 V was obtained by using these cir-
cuit parameters:
Electrical Characteristics
For all specifications: T
A
=
40 °C to +85 °C, V
DD
= 5 V ± 5%, unless otherwise noted. Typical values are for
T
A
= 25 °C and V
DD
= 5 V. Input signal frequency is 1004 Hz, unless otherwise noted.
dc Characteristics
Table 8. dc Characteristics
Parameter
Symbol
T
A
T
J
Min
40
40
Max
85
125
Unit
°C
°C
Ambient Operating Temperature
Operating Junction Temperature
HBM ESD Threshold Voltage
Device
T8533/T8534
Voltage
>2000
Parameter
Symbol
V
IL
V
IH
I
IL
Test Conditions
All inputs
All inputs
Digital, without pull-up, inputs,
GND < V
IN
< V
DD
With internal pull-up, V
IN
= GND
(INTS, MCLK, and RST pins)
With internal pull-up, V
IN
= V
DD
(INTS, MCLK, and RST pins)
I
L
= 3.2 mA
I
L
=
320
μ
A
GND < V
OUT
< V
DD
Min
—
2.0
10
Typ
—
—
—
Max
0.8
—
10
Unit
V
V
μ
A
Input Voltage Low
Input Voltage High
Input Current
240
10
—
—
10
10
μ
A
μ
A
Output Voltage Low
Output Voltage High
Output Current in High-impedance
State
Line Driver (DX and DO pins) Output
Voltage High
Line Driver (DX and DO pins) Output
Voltage Low
V
OL
V
OH
I
OZ
—
3.5
30
—
—
—
0.4
—
30
V
V
μ
A
V
OH
I
L
=
10 mA
V
DD
0.5
—
—
V
V
OL
I
L
= 10 mA
—
—
0.5
V
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